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NTMS4404N, NTMS4404NR, NTMS4404NR2

Table of contents:
Info of NTMS4404N
Info of NTMS4404NR
Info of NTMS4404NR2

NTMS4404N, NTMS4404NR, NTMS4404NR2 Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:09+ D/C:1000

NTMS4404N, NTMS4404NR, NTMS4404NR2 Datasheet download

Five Points

Part Number: NTMS4404NR2

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: 09+

D/C: 1000

Description: MOSFET N-CH 30V 7A 8-SOIC

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NTMS4404N Maximum Ratings

Parameter			Symbol	Value	Units
Drain−to−Source Voltage			V_DSS	30	V
Gate−to−Source Voltage			V_GS	±20	V
Continuous Drain Current (Note 1)	Steady State	TA = 25 °C	I_D	9.6	mA
		TA = 70°C		7.6
	tp10 s	TA = 25 °C		12
Power Dissipation (Note 1)	Steady State		P_d	1.56	W
	tp10 s			2.5
Continuous Drain Current (Note 2)	Steady State	TA = 25 °C	I_D	7.0	A
		TA = 70 °C		5.6
Power Dissipation (Note 2)		TA = 25 °C	P_d	0.83	W

NTMS4404N Features

• High Density Power MOSFET with Ultra Low RDS(on) for Higher Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space
• IDSS Specified at Elevated Temperature
• Diode Exhibits High Speed, Soft Recovery

NTMS4404N Typical Application

• Power Management for Battery Power Products
• Portable Products
• Computers, Printers, PCMCIA Cards
• Cell Phones, Cordless Telephones

NTMS4404N Connection Diagram

NTMS4404NR2 Parameters

Technical/Catalog Information	NTMS4404NR2
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	11.5 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 24V
Power - Max	830mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTMS4404NR2 NTMS4404NR2 NTMS4404NR2OSCT ND NTMS4404NR2OSCTND NTMS4404NR2OSCT

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