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NTR1P02LT1, NTR1P02LT1G, NTR1P02T1

Table of contents:
Info of NTR1P02LT1
Info of NTR1P02LT1G
Info of NTR1P02T1

NTR1P02LT1, NTR1P02LT1G, NTR1P02T1 Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT23 D/C:05+

NTR1P02LT1, NTR1P02LT1G, NTR1P02T1 Datasheet download

Five Points

Part Number: NTR1P02LT1G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: SOT23

D/C: 05+

Description: MOSFET P-CH 20V 1.3A SOT-23

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NTR1P02LT1 General Description

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

NTR1P02LT1 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	-20	Vdc
GatetoSource Voltage− Continuous	V_GS	±12	Vdc
Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp 3 10 s)	I_{D I_DM}	−1.3 −4.0	A A
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Total Power Dissipation @ TA= 25°C (Note 2)	P_d	400	mW
Thermal Resistance Junction to Ambient	R_JA	300	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 s.	T_L	260	°C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

NTR1P02LT1 Features

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available

NTR1P02LT1 Connection Diagram

NTR1P02LT1G Parameters

Technical/Catalog Information	NTR1P02LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1.3A
Rds On (Max) @ Id, Vgs	220 mOhm @ 750mA, 4.5V
Input Capacitance (Ciss) @ Vds	225pF @ 5V
Power - Max	400mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	5.5nC @ 4V
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTR1P02LT1G NTR1P02LT1G NTR1P02LT1GOSCT ND NTR1P02LT1GOSCTND NTR1P02LT1GOSCT

NTR1P02T1 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	-20	V
GatetoSource Voltage− Continuous	V_GS	±20	V
Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp 3 10 s)	I_{D I_DM}	−1.0 −2.67	A A
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Total Power Dissipation @ TA= 25°C (Note 2)	P_d	400	mW
Thermal Resistance Junction to Ambient	R_JA	300	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 s.	T_L	260	°C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

NTR1P02T1 Features

• Ultra Low On−Resistance Provides Higher Efficiency
and Extends Battery Life
RDS(on) = 0.180 , VGS = −10 V
RDS(on) = 0.280 , VGS = −4.5 V
• Power Management in Portable and Battery−Powered Products
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Mounting Information for SOT−23 Package Provided

NTR1P02T1 Typical Application

• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones

NTR1P02T1 Connection Diagram

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