PMWD19UN, PMWD20XN, PMWD26UN Selling Leads, Datasheet
MFG:1828 Package Cooled:TSSOP-8 D/C:2003
PMWD19UN, PMWD20XN, PMWD26UN Datasheet download
Part Number: PMWD19UN
MFG: 1828
Package Cooled: TSSOP-8
D/C: 2003
PMWD19UN, PMWD20XN, PMWD26UN
- Table of contents:
Info of PMWD19UN
Info of PMWD20XN
Info of PMWD26UN
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About PMWD19UN
PDF/DataSheet Download
Datasheet: PMWD19UN
File Size: 249563 KB
Manufacturer: Philips
Download : Click here to Download
About PMWD20XN
PDF/DataSheet Download
Datasheet: PMWD20XN
File Size: 96160 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PMWD26UN
PDF/DataSheet Download
Datasheet: PMWD26UN
File Size: 245822 KB
Manufacturer: Philips
Download : Click here to Download
PMWD19UN General Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD19UN in SOT530-1 (TSSOP8).
PMWD19UN Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 150 | 30 | V | |
| VDGR | drain-gate voltage | 25 Tj 150 ; RGS = 20 kW | 30 | V | |
| VGS | gate-source voltage | ±10 | V | ||
| ID | drain current (DC) | Tsp = 25 ; VGS = 4.5 V; Figure 2 and 3 | 5.6 | A | |
| Tsp = 100 ; VGS = 4.5 V; Figure 2 | 3.4 | A | |||
| IDM | peak drain current | Tsp = 25 ; pulsed; tp 10 ms; Figure 3 | 20 | A | |
| Ptot | total power dissipation | Tsp = 25 ; Figure 1 | 2.3 | W | |
| Tstg | storage temperature | -55 | +150 | ||
| Tj | junction temperature | -55 | +150 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 | 2 | A | |
| ISM | peak source (diode forward) current | Tsp = 25 ; pulsed; tp 10 ms | 7 | A | |
PMWD19UN Features
· Surface mounting package
· Low profile
· Very low threshold
· Fast switching
· Low profile
· Very low threshold
· Fast switching
PMWD19UN Typical Application
· Portable appliances
· PCMCIA cards
· Battery management
· Load switching
· PCMCIA cards
· Battery management
· Load switching
PMWD20XN General Description
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
PMWD20XN Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
| VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C | - | 20 | V |
| VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; |
- | 20 | V |
| VGS | gate-source voltage (DC) | - | ±12 | V | |
| ID | drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- | 10.4 | A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- | 6.5 | A | ||
| IDM | peak drain current | Tsp = 25 °C;pulsed; tp 10s; Figure 3 |
- | 41.7 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 4.2 | W |
| Tstg | storage temperature | -55 | +150 | °C | |
| Tj | junction temperature | -55 | +150 | °C | |
|
Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 °C | - | 3.5 | A |
| ISM | peak source (diode forward) current | Tsp = 25 °C;pulsed; tp 10s | - | 14 | A |
PMWD20XN Features
Surface-mounted package
Low profile
Extremely low threshold voltage
Fast switching
Low profile
Extremely low threshold voltage
Fast switching
PMWD20XN Typical Application
Portable appliances
Battery management
Battery management
PMWD20XN Connection Diagram
PMWD26UN General Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMWD26UN in SOT530-1 (TSSOP8).
PMWD26UN Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 150 | 20 | V | |
| VDGR | drain-gate voltage | 25 Tj 150 ; RGS = 20 k | 20 | V | |
| VGS | gate-source voltage | ±10 | V | ||
| ID | drain current (DC) | Tsp = 25 ; VGS = 4.5 V; Figure 2 and 3 | 5.2 | A | |
| Tsp = 100 ; VGS = 4.5 V; Figure 2 | 3.1 | A | |||
| IDM | peak drain current | Tsp = 25 ; pulsed; tp 10 ms; Figure 3 | 18 | A | |
| Ptot | total power dissipation | Tsp = 25 ; Figure 1 | 2.3 | W | |
| Tstg | storage temperature | -55 | +150 | ||
| Tj | junction temperature | -55 | +150 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tsp = 25 | 2 | A | |
| ISM | peak source (diode forward) current | Tsp = 25 ; pulsed; tp 10s | 7 | A | |
PMWD26UN Features
· Surface mounting package
· Low profile
· Very low threshold
·Fast switching
PMWD26UN Typical Application
·Portable appliances
· PCMCIA cards
·Battery management
· Load switching
· PCMCIA cards
·Battery management
· Load switching
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