PTB20125, PTB20135, PTB20141 Selling Leads, Datasheet
MFG:Ericsson Package Cooled:BIPOLARS D/C:N/A
PTB20125, PTB20135, PTB20141 Datasheet download
Part Number: PTB20125
MFG: Ericsson
Package Cooled: BIPOLARS
D/C: N/A
PTB20125, PTB20135, PTB20141
- Table of contents:
Info of PTB20125
Info of PTB20135
Info of PTB20141
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About PTB20125
PDF/DataSheet Download
Datasheet: PTB20125
File Size: 241210 KB
Manufacturer: ERICSSON [Ericsson]
Download : Click here to Download
About PTB20135
PDF/DataSheet Download
Datasheet: PTB20135
File Size: 48993 KB
Manufacturer: ERICSSON [Ericsson]
Download : Click here to Download
About PTB20141
PDF/DataSheet Download
Datasheet: PTB20141
File Size: 42712 KB
Manufacturer: ERICSSON [Ericsson]
Download : Click here to Download
PTB20135 General Description
The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
PTB20135 Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
|
Collector-emitter voltage |
VCER |
40 |
Vdc |
|
Collector-Base Voltage |
VCBO |
65 |
Vdc |
|
Emitter-Base Voltage (collector open) |
VEBO |
4.0 |
Vdc |
|
Collector Current (continuous) |
IC |
20 |
Adc |
|
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by |
PD |
159 0.95 |
Watts W/°C |
|
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
|
Thermal Resistance (Tflange = 70° C) |
RqJC |
1.06 |
°C/W |
PTB20135 Features
26 Volt, 960 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
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