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PTB 20006

Features: 4 Watts, 860900 MHzClass AB Characteristics 50% Collector Efficiency at 4 WattsGold MetallizationSilicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc ...

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PTB 20006: Features: 4 Watts, 860900 MHzClass AB Characteristics 50% Collector Efficiency at 4 WattsGold MetallizationSilicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit ...

PTB 20006 Data Sheet

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Part Number:
PTB 20006
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

4 Watts, 860900 MHz
 Class AB Characteristics
50% Collector Efficiency at 4 Watts
 Gold Metallization
Silicon Nitride Passivated


Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

4.0

Vdc

Collector Current (continuous)

 IC

1.7

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

35

0.2

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

5.0

°C/W




Description

The PTB 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, PTB 20006 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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