PTB 20003 Selling Leads, Price trend, PTB 20003 DataSheet download, circuit diagram from SeekIC.com

Features: Specified 25 Volts4 Watts, 915960 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage ...

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SeekIC No. : 004466694 Detail

PTB 20003: Features: Specified 25 Volts4 Watts, 915960 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol ...

PTB 20003 Data Sheet

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Part Number:: PTB 20003
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/26

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Product Details

Description

Features:

Specified 25 Volts
4 Watts, 915960 MHz
Class AB Characteristics
50% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	40	V_dc
Collector-Base Voltage	V_CBO	50	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	1.7	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	35 0.2	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	5.0	°C/W

Description

The PTB 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, PTB 20003 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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PTB 20003

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