PTB20287, PTB23001X, PTB23003X Selling Leads, Datasheet
MFG:ASI Package Cooled:TRANSISTOR D/C:07+
PTB20287, PTB23001X, PTB23003X Datasheet download
Part Number: PTB20287
MFG: ASI
Package Cooled: TRANSISTOR
D/C: 07+
PTB20287, PTB23001X, PTB23003X
- Table of contents:
Info of PTB20287
Info of PTB23001X
Info of PTB23003X
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About PTB20003
PDF/DataSheet Download
Datasheet: PTB20003
File Size: 55777 KB
Manufacturer: ERICSSON [Ericsson]
Download : Click here to Download
About PTB23001X
PDF/DataSheet Download
Datasheet: PTB23001X
File Size: 101971 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PTB23003X
PDF/DataSheet Download
Datasheet: PTB23003X
File Size: 101971 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PTB23001X General Description
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
PTB23001X Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCES | collector-emitter voltage | RBE = 0W | - | 40 | V |
| VEBO | emitter-base voltage | open collector | - | 15 | V |
| IC |
collector current (DC) PTB23001X PTB23003X PTB23005X |
- - - |
0.25 0.5 0.75 |
A A A | |
| Ptot |
total power dissipation PTB23001X PTB23003X PTB23005X |
Tmb = 75 °C; f > 1 MHz |
- - - |
4.2 7.6 8.7
|
W W W |
| Tstg | storage temperature | -65 | +200 | °C | |
| Tj | operating junction temperature | - | 200 | °C | |
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 | °C |
PTB23001X Features
· Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Multicell geometry gives good balance of dissipated
power and low thermal resistance
· Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Multicell geometry gives good balance of dissipated
power and low thermal resistance
· Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
PTB23001X Typical Application
Common-base, class B power amplifiers up to 4.2 GHz.
PTB23003X General Description
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
PTB23003X Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCES | collector-emitter voltage | RBE = 0W | - | 40 | V |
| VEBO | emitter-base voltage | open collector | - | 15 | V |
| IC |
collector current (DC) PTB23001X PTB23003X PTB23005X |
- - - |
0.25 0.5 0.75 |
A A A | |
| Ptot |
total power dissipation PTB23001X PTB23003X PTB23005X |
Tmb = 75 °C; f > 1 MHz |
- - - |
4.2 7.6 8.7
|
W W W |
| Tstg | storage temperature | -65 | +200 | °C | |
| Tj | operating junction temperature | - | 200 | °C | |
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 | °C |
PTB23003X Features
· Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Multicell geometry gives good balance of dissipated
power and low thermal resistance
· Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Multicell geometry gives good balance of dissipated
power and low thermal resistance
· Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
PTB23003X Typical Application
Common-base, class B power amplifiers up to 4.2 GHz.
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