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PTB23005X, PTB3I78-5633T-SC/UPC-KAH, PTB48502AAS

Table of contents:
Info of PTB23005X
Info of PTB3I78-5633T-SC/UPC-KAH
Info of PTB48502AAS

PTB23005X, PTB3I78-5633T-SC/UPC-KAH, PTB48502AAS Selling Leads, Datasheet

MFG:TI Package Cooled:TRANSISTOR D/C:04NOPB

PTB23005X, PTB3I78-5633T-SC/UPC-KAH, PTB48502AAS Picture

PTB23005X, PTB3I78-5633T-SC/UPC-KAH, PTB48502AAS Datasheet download

Five Points

Part Number: PTB23005X

MFG: TI

Package Cooled: TRANSISTOR

D/C: 04NOPB

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PTB23005X General Description

NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.

PTB23005X Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	40	V
V_CES	collector-emitter voltage	RBE = 0W	-	40	V
V_EBO	emitter-base voltage	open collector	-	15	V
I_C	collector current (DC) PTB23001X PTB23003X PTB23005X		- - -	0.25 0.5 0.75	A A A
P_tot	total power dissipation PTB23001X PTB23003X PTB23005X	T_mb = 75 °C; f > 1 MHz	- - -	4.2 7.6 8.7	W W W
T_stg	storage temperature		-65	+200	°C
T_j	operating junction temperature		-	200	°C
T_sld	soldering temperature	t 10 s; note 1	-	235	°C

PTB23005X Features

· Diffused emitter ballasting resistors providing excellent
    current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Multicell geometry gives good balance of dissipated
    power and low thermal resistance
· Localized thick oxide auto-alignment process and gold
    sandwich metallization ensure an optimum temperature
    profile and excellent performance and reliability.

PTB23005X Typical Application

Common-base, class B power amplifiers up to 4.2 GHz.

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