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RA30H4045MR, RA30H4047M, RA30H4452M

RA30H4045MR, RA30H4047M, RA30H4452M Selling Leads, Datasheet

MFG:mitsubishi  Package Cooled:H2S  D/C:09+

RA30H4045MR, RA30H4047M, RA30H4452M Picture

RA30H4045MR, RA30H4047M, RA30H4452M Datasheet download

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Part Number: RA30H4045MR

 

MFG: mitsubishi

Package Cooled: H2S

D/C: 09+

 

 

 
 
 
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About RA30441241

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Datasheet: RA30441241

File Size: 132013 KB

Manufacturer: HAMLIN

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About RA30H4047M

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Datasheet: RA30H4047M

File Size: 69032 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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About RA30H4452M

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Datasheet: RA30H4452M

File Size: 96928 KB

Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

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RA30H4047M General Description

The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA30H4047M Maximum Ratings

SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power f=400-470MHz,
ZG=ZL=50
100 mW
Pout Output Power 45 W
Tcase(OP) Operation Case Temperature Range -30 to +110
Tstg Storage Temperature Range -40 to +110
The above parameters are independently guaranteed.

RA30H4047M Features

• Enhancemen- Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, >40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA30H4452M General Description

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.

 The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA30H4452M Maximum Ratings

SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power f=440-520MHz,
ZG=ZL=50
100 mW
Pout Output Power 45 W
Tcase(OP) Operation Case Temperature Range -30 to +110
Tstg Storage Temperature Range -40 to +110
Above Parameters are guaranteed independently

RA30H4452M Features

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, >40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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