MFG:MITSUBISHI Package Cooled:135-175MHZ30W D/C:05+
RA30H1317M, RA30H2127M, RA30H3340M Datasheet download
MFG: MITSUBISHI
Package Cooled: 135-175MHZ30W
D/C: 05+
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Datasheet: RA30H1317M
File Size: 66698 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
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PDF/DataSheet Download
Datasheet: RA30H2127M
File Size: 63014 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RA30H3340M
File Size: 110629 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
| SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
| VDD | Drain Voltage | VGG<5V | 17 | V |
| VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
| Pin | Input Power | f=135-175MHz, ZG=ZL=50 |
100 | mW |
| Pout | Output Power | 45 | W | |
| Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
| Tstg | Storage Temperature Range | -40 to +110 |
>40% @ VDD=12.5V, VGG=5V, Pin=50mWThe RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
| SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
| VDD | Drain Voltage | VGG<5V | 17 | V |
| VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
| Pin | Input Power | f=330-400MHz, ZG=ZL=50 |
100 | mW |
| Pout | Output Power | 45 | W | |
| Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
| Tstg | Storage Temperature Range | -40 to +110 |
>40% @ VDD=12.5V, VGG=5V, Pin=50mW
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