MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:har D/C:03+
RFD16N05L, RFD16N05LSM, RFD16N05LSM9A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: har
D/C: 03+
Description: MOSFET N-CH 50V 16A TO-252AA
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PDF/DataSheet Download
Datasheet: RFD16N05L
File Size: 48980 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFD16N05LSM
File Size: 48980 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFD10P03
File Size: 278675 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages
| RFD16N05L, RFD16N05LSM |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
| Continuous Drain Current ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | 45 | A |
| Gate to Source Voltage VGS | ±20 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Derate above 25oC | 0.48 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |
| Technical/Catalog Information | RFD16N05LSM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 16A, 5V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 60W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFD16N05LSM RFD16N05LSM |
These are N-Channel logic level power MOSFETsmanufactured using the MegaFET process. This process,which uses feature sizes approaching those of LSIintegrated circuits gives optimum utilization of silicon,resulting in outstanding performance. They were designedfor use with logic level (5V) driving sources in applicationssuch as programmable controllers, automotive switching,switching regulators, switching converters, motor relaydrivers and emitter switches for bipolar transistors. Thisperformance is accomplished through a special gate oxidedesign which provides full rated conductance at gate biasesin the 3V to 5V range, thereby facilitating true on-off powercontrol directly from logic circuit supply voltages.
Formerly developmental type TA09871.
| Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
|---|---|---|---|---|---|---|---|---|
| RFD16N05LSM | Full Production | RoHS Compliant | $0.75 | TO-252(DPAK) | 2 | RAIL | N/A | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: RFD16N Line 3: 05LSM |
| RFD16N05LSM9A | Full Production | RoHS Compliant | $0.81 | TO-252(DPAK) | 2 | TAPE REEL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: RFD16N Line 3: 05LSM |
| * Fairchild 1,000 piece Budgetary Pricing |
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product RFD16N05LSM is available. Click here for more information . |
| Technical/Catalog Information | RFD16N05LSM9A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 16A, 5V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 60W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 80nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFD16N05LSM9A RFD16N05LSM9A RFD16N05LSM9ACT ND RFD16N05LSM9ACTND RFD16N05LSM9ACT |
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