MOSFET TO-252AA N-Ch Power
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 50 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 16 A | ||
| Resistance Drain-Source RDS (on) : | 0.047 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252AA | Packaging : | Tube |
| RFD16N05, RFD16N05SM | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
| Continuous Drain Current ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to Peak Current Curve | A |
| Gate to Source Voltage VGS | ±20 | V |
| EAS Power Dissipation PD 25oC |
48 | W |
| Derate above 25oC | 0.32 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |
| Technical/Catalog Information | RFD16N05SM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| Power - Max | 72W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 80nC @ 20V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFD16N05SM RFD16N05SM |