RFD16N05SM

MOSFET TO-252AA N-Ch Power

product image

RFD16N05SM Picture
SeekIC No. : 00160801 Detail

RFD16N05SM: MOSFET TO-252AA N-Ch Power

floor Price/Ceiling Price

Part Number:
RFD16N05SM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.047 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 16 A
Drain-Source Breakdown Voltage : 50 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• 16A, 50V
• rDS(ON) = 0.047W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

  RFD16N05, RFD16N05SM UNITS
Drain to Source Voltage (Note 1) VDSS 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 V
Continuous Drain Current ID 16 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve A
Gate to Source Voltage VGS ±20 V
EAS
Power Dissipation PD
25oC
48 W
Derate above 25oC 0.32 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 . Tpkg 260 o C



Parameters:

Technical/Catalog InformationRFD16N05SM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs47 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 25V
Power - Max72W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFD16N05SM
RFD16N05SM



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Batteries, Chargers, Holders
Optoelectronics
LED Products
Motors, Solenoids, Driver Boards/Modules
RF and RFID
Computers, Office - Components, Accessories
View more