RFF602-12, RFF60P06, RFF70N06 Selling Leads, Datasheet
MFG:N/A Package Cooled:JAT D/C:05+
RFF602-12, RFF60P06, RFF70N06 Datasheet download
Part Number: RFF602-12
MFG: N/A
Package Cooled: JAT
D/C: 05+
RFF602-12, RFF60P06, RFF70N06
- Table of contents:
Info of RFF602-12
Info of RFF60P06
Info of RFF70N06
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About RFF60P06
PDF/DataSheet Download
Datasheet: RFF60P06
File Size: 91008 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFF60P06
PDF/DataSheet Download
Datasheet: RFF60P06
File Size: 91008 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFF70N06
PDF/DataSheet Download
Datasheet: RFF70N06
File Size: 80048 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFF60P06 General Description
The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. <BR><BR>These transistors can be operated directly from integrated circuits. Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
Formerly developmental type TA09835.
RFF60P06 Maximum Ratings
| RFF60P06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Power Dissipation PD | 125 | W |
| Derate Above 25oC | 1.0 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
RFF60P06 Features
• 25A, 60V
• rDS(ON) = 0.030W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
• rDS(ON) = 0.030W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
RFF70N06 General Description
The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. <BR><BR>Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
Formerly developmental type TA49007.
Formerly developmental type TA49007.
RFF70N06 Maximum Ratings
| RFF70N06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 60 | V |
| Continuous Drain Current ID | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Power Dissipation PD | 100 | W |
| Linear Derating Factor | 0.80 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
RFF70N06 Features
• 25A†, 60V
• rDS(ON) = 0.025W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
† Current is limited by the package capability.
• rDS(ON) = 0.025W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
† Current is limited by the package capability.
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