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MFG:FAIRCHILD  Package Cooled:TO-3P  D/C:05+  

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RFF Series Datasheet download

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Part Number: RFF70N06

 

MFG: FAIRCHILD

Package Cooled: TO-3P

D/C: 05+

Description: The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes a...


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RFF70N06 General Description


The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. <BR><BR>Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.

Formerly developmental type TA49007.

RFF70N06 Maximum Ratings

  RFF70N06 UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 60 V
Continuous Drain Current ID 50 A
Pulsed Drain Current (Note 3) IDM 120 A
Gate to Source Voltage VGS ±20 V
Power Dissipation PD 100 W
Linear Derating Factor 0.80 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C

RFF70N06 Features

• 25A†, 60V
• rDS(ON) = 0.025W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
† Current is limited by the package capability.

RFF70N06 datasheet

RFF70N06
PDF/DataSheet Download

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  • ·RFF60P06
  • INTERSIL [Intersil Corporation] 
  • 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET 
  • 91008 KB
  • RFF60P06 Datasheet Download

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