MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:GEN,HAR D/C:08+
RFP12N10, RFP12N10L, RFP12N18 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: GEN,HAR
D/C: 08+
Description: MOSFET N-CH 100V 12A TO-220AB
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PDF/DataSheet Download
Datasheet: RFP12N10
File Size: 44246 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP12N10L
File Size: 39352 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP12N18
File Size: 36500 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| RFM12N08 | RFM12N10 | RFP18N08 | RFP18N10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | 80 | 100 | V |
| Continuous Drain Current ID | 12 | 12 | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.6 | 0.6 | 0.48 | 0.48 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
| Technical/Catalog Information | RFP12N10L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 12A, 5V |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
| Power - Max | 60W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFP12N10L RFP12N10L |
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
| RFM12N18 | RFM12N20 | RFP18N18 | RFM12N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | 180 | 200 | V |
| Continuous Drain Current ID | 12 | 12 | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
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