RFP12N10L

The features of RFP12N10L are: (1)12A, 100V; (2)rDS(ON)=0.200; (3)design optimized for 5V gate drives; (4)can be directly from Q-MOS, N-MOS, TTL circuits; (5)compatible with automotive drive requirements; (6)SOA is power-dissipation limited; (7)nanosecond switching speeds; (8)linear transfer charaxteristics; (9)high input impedance; (10)majority carrier device.

The following is about the absolute maximum ratings of RFP12N10L: (1)drain-source voltage: 100V; (2)drain-gate voltage, Rgs=1M: 100V; (3)gate-source voltage: 10V; (4)pulsed drain current: 30A; (5)maximum power dissipation @ Tc=25: 60W; (6)linear derating factor: 0.48W/; (7)operating and storage temperature: -55 to +150.

The electrical characteristics of the RFP12N10L are: (1)drain-source breakdown voltage: 100V min at ID=250mA, VGS=0; (2)gate thresholad voltage: 1V min and 2V max at VDS=VGS, ID=250mA; (3)zero gate voltage drain: 1A max at VDS=65V; (4)gate-source leakage current: 100A max at VGS=10V, VDS=0; (5)drain-source on resistance: 0.2 max at ID=12A, VGS=5V; (6)input capacitance: 900pF max at VDS=25V, VGS=0V, f=1MHz; (7)output capacitance: 325pF max at VDS=25V, VGS=0V, f=1MHz.