RFP12N20, RFP12P08, RFP12P10 Selling Leads, Datasheet
MFG:Intersil Package Cooled:9800 D/C:08+/09+
RFP12N20, RFP12P08, RFP12P10 Datasheet download
Part Number: RFP12N20
MFG: Intersil
Package Cooled: 9800
D/C: 08+/09+
MFG:Intersil Package Cooled:9800 D/C:08+/09+
RFP12N20, RFP12P08, RFP12P10 Datasheet download
MFG: Intersil
Package Cooled: 9800
D/C: 08+/09+
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PDF/DataSheet Download
Datasheet: RFP12N20
File Size: 36500 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: RFP12P08
File Size: 37897 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP12P10
File Size: 37897 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM12N18 | RFM12N20 | RFP18N18 | RFM12N20 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 180 | 200 | 180 | 200 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | 180 | 200 | V |
Continuous Drain Current ID | 12 | 12 | 12 | 12 | A |
Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
Maximum Temperature for Soldering | |||||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KW) (Note 1). . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3 . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . PD Linear Derating Factor .. . . . . . . . Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . .. . Tpkg |
RFP12P08 -80 -80 12 30 ±20 75 0.6 -55 to 150 300 260 |
RFP12P10 -100 -100 12 30 ±20 75 0.6 -55 to 150 300 260 |
UNITS V V A A V W W/oC oC oC oC |
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KW) (Note 1). . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3 . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . PD Linear Derating Factor .. . . . . . . . Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . .. . Tpkg |
RFP12P08 -80 -80 12 30 ±20 75 0.6 -55 to 150 300 260 |
RFP12P10 -100 -100 12 30 ±20 75 0.6 -55 to 150 300 260 |
UNITS V V A A V W W/oC oC oC oC |