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These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrate circuits.
RFP2N10 Maximum Ratings
RFP2P08
RFP2P10
UNITS
Drain to Source Voltage (Note 1) VDSS
80
100
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
80
100
V
Continuous Drain Current ID
2
2
A
Pulsed Drain Current (Note 3) IDM
5
5
A
Gate to Source Voltage VGS
±20
±20
V
Maximum Power Dissipation PD
25
25
W
Linear Derating Factor
0.2
0.2
W/o Caaa
Operating and Storage Temperature .TJ, TSTG
-55 to 150
-55 to 150
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL
300
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
260
o C
RFP2N10 Features
• 2A, 80V and 100V • rDS(ON) 1.05W • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP2N10L Parameters
Technical/Catalog Information
RFP2N10L
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
2A
Rds On (Max) @ Id, Vgs
1.05 Ohm @ 2A, 5V
Input Capacitance (Ciss) @ Vds
200pF @ 25V
Power - Max
25W
Packaging
Tube
Gate Charge (Qg) @ Vgs
-
Package / Case
TO-220AB
FET Feature
Logic Level Gate
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
RFP2N10L RFP2N10L
RFP2N10L Maximum Ratings
Drain to Source Voltage (Note 1). . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MW) (Note 1) . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . ..ID Pulsed Drain Current (Note 3). . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . .PD Derate above 25oC . . . . . . . . . . . . . . . . . Operating and Storage Temperature. . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . .. TL Package Body for 10s, See Techbrief 334 . . . . . . Tpkg
• 2A, 80V and 100V • rDS(ON) = 1.050W • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP2N12 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFP2N12 Maximum Ratings
RFP2N12
RFP2N15
UNITS
Drain to Source Voltage (Note 1) VDSS
120
150
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
120
150
V
Continuous Drain Current ID
2
2
A
Pulsed Drain Current (Note 3) IDM
5
5
A
Gate to Source Voltage VGS
±20
±20
V
Maximum Power Dissipation PD
25
25
W
Linear Derating Factor
0.2
0.2
W/o Caaa
Operating and Storage Temperature .TJ, TSTG
-55 to 150
-55 to 150
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL
300
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
260
o C
RFP2N12 Features
• 2A, 120V and 150V • rDS(ON) = 1.750W • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"