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RFP2N10, RFP2N10L, RFP2N12

RFP2N10, RFP2N10L, RFP2N12 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:GEN,HAR  D/C:TO

RFP2N10L Picture

RFP2N10, RFP2N10L, RFP2N12 Datasheet download

Five Points

Part Number: RFP2N10L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: GEN,HAR

D/C: TO

Description: MOSFET N-CH 100V 2A TO-220AB

 

 
 
 
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RFP2N10 Suppliers

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  • RFP12N10L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-28
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP14N05L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-04-28
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP1562-20

  • Vendor: Power D/C: 05+& Qty: 5985  Adddate: 2024-04-28
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About RFP2N10

PDF/DataSheet Download

Datasheet: RFP2N10

File Size: 47858 KB

Manufacturer: INTERSIL [Intersil Corporation]

Download : Click here to Download

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RFP2N10L Suppliers

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  • RFP12N10L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-28
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP14N05L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-04-28
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP1562-20

  • Vendor: Power D/C: 05+& Qty: 5985  Adddate: 2024-04-28
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About RFP2N10L

PDF/DataSheet Download

Datasheet: RFP2N10L

File Size: 36409 KB

Manufacturer: INTERSIL [Intersil Corporation]

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RFP2N12 Suppliers

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  • RFP12N10L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-04-28
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP14N05L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-04-28
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP1562-20

  • Vendor: Power D/C: 05+& Qty: 5985  Adddate: 2024-04-28
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • RFP15N05

  • Vendor: Fairchild D/C: 03+& Qty: 500  Adddate: 2024-04-28
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  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • RFP15P05

  • Vendor: Fairchild D/C: 02+& Note:   Adddate: 2024-04-28
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  • Yes Components Pte Ltd   Singapore
    Contact: Mr.JosephTan   MSN:josephtan09@hotmail.com
    Tel: 65--67410300
    Fax: 65--67491048
    (3)

About RFP2N12

PDF/DataSheet Download

Datasheet: RFP2N12

File Size: 36047 KB

Manufacturer: INTERSIL [Intersil Corporation]

Download : Click here to Download

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RFP2N10 General Description

These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such
switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrate circuits.

RFP2N10 Maximum Ratings

  RFP2P08 RFP2P10 UNITS
Drain to Source Voltage (Note 1) VDSS 80 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 80 100 V
Continuous Drain Current ID 2 2 A
Pulsed Drain Current (Note 3) IDM 5 5 A
Gate to Source Voltage VGS ±20 ±20 V
Maximum Power Dissipation PD 25 25 W
Linear Derating Factor 0.2 0.2 W/o Caaa
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering      
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 o C

RFP2N10 Features

• 2A, 80V and 100V
• rDS(ON) 1.05W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RFP2N10L Parameters

Technical/Catalog InformationRFP2N10L
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs1.05 Ohm @ 2A, 5V
Input Capacitance (Ciss) @ Vds 200pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names RFP2N10L
RFP2N10L

RFP2N10L Maximum Ratings

Drain to Source Voltage (Note 1). . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 1MW) (Note 1) . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . ..ID
Pulsed Drain Current (Note 3). . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . .PD
Derate above 25oC . . . . . . . . . . . . . . . . .
Operating and Storage Temperature. . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . .. TL
Package Body for 10s, See Techbrief 334 . . . . . . Tpkg
RFP15N08L
80
80
±10
15
40
72
0.48
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
o C
o C
o C

RFP2N10L Features

• 2A, 80V and 100V
• rDS(ON) = 1.050W
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RFP2N12 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

RFP2N12 Maximum Ratings

  RFP2N12 RFP2N15 UNITS
Drain to Source Voltage (Note 1) VDSS 120 150 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 120 150 V
Continuous Drain Current ID 2 2 A
Pulsed Drain Current (Note 3) IDM 5 5 A
Gate to Source Voltage VGS ±20 ±20 V
Maximum Power Dissipation PD 25 25 W
Linear Derating Factor 0.2 0.2 W/o Caaa
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering      
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 o C

RFP2N12 Features

• 2A, 120V and 150V
• rDS(ON) = 1.750W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

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