MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:9800 D/C:08+/09+
RFP3N50, RFP-400-50R, RFP40N10 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 9800
D/C: 08+/09+
Description: MOSFET N-CH 100V 40A TO-220AB
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PDF/DataSheet Download
Datasheet: RFP3N50
File Size: 83910 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP-100-50SMA-B
File Size: 112721 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP40N10
File Size: 52273 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
| RFM3N45 | RFM3N50 | RFP3N45 | RFP3N50 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 450 | 200 | 500 | 500 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 200 | 500 | 500 | V |
| Continuous Drain Current ID | 3 | 3 | 3 | 3 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
| Technical/Catalog Information | RFP40N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 40A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 300nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFP40N10 RFP40N10 |
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding perormance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA9846
| UNITS | |||
| Drain to Source Breakdown Voltage (Note 1) | VDSS | 100 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . | VDGR | 100 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Drain Current Continuous (Figure 2). | ID | 40 | A |
| Pulsed Drain Current (Note 2) | IDM | 100 | A |
| Pulse Avalanche Rating | EAS | Figures 4, 12, 13 | |
| Power Dissipation | PD | 160 | W |
| Derate Above 25 | 1.07 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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