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RMPA0959, RMPA0963, RMPA0965

Table of contents:
Info of RMPA0959
Info of RMPA0963
Info of RMPA0965

RMPA0959, RMPA0963, RMPA0965 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:RF and RFID Package Cooled:QFN-10 D/C:03+

RMPA0959, RMPA0963, RMPA0965 Datasheet download

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Part Number: RMPA0959

Category: RF and RFID

MFG: Fairchild Semiconductor (VA)

Package Cooled: QFN-10

D/C: 03+

Description: IC MOD RF POWER AMP 8PIN 3X3LCC

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RMPA0959 Parameters

Technical/Catalog Information	RMPA0959
Vendor	Fairchild Semiconductor (VA)
Category	RF and RFID
Package / Case	10-LCC
Voltage - Supply	3V ~ 4.2V
Current - Supply	62mA
Gain	25dB ~ 26.5dB
Frequency	824MHz ~ 849MHz
RF Type	Cellular, CDMA, CDMA2000, AMPS, IS-95
Packaging	Cut Tape (CT)
Noise Figure	4dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA0959 RMPA0959 RMPA0959CT ND RMPA0959CTND RMPA0959CT

RMPA0959 General Description

The RMPA0959 power amplifier module (PAM) is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our Heterojunction Bipolar Transistor (HBT) process.

RMPA0959 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_CC1, V_CC2	Supply Voltages	5.0	V
V_ref	Reference Voltage	2.6 to 3.5	V
V_mode	Power Control Voltage	3.5	V
P_IN	RF Input Power	+10	dBm
T_STG	Storage Temperature	-55 to +150

Notes:
1:No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

RMPA0959 Features

• Single positive-supply operation with low power and shutdown modes
• 39% CDMA efficiency at +28dBm average output power
• 53% AMPS mode efficiency at +31dBm output power
• Compact LCC package ( 4.0 X 4.0 x 1.5 mm)
• Internally matched to 50 and DC blocked RF input/ output
• Meets CDMA2000-1XRTT performance requirements

RMPA0963 General Description

The RMPA0963 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA0963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4 mm PAMs widely used today, minimizing the design time to apply this performanceenhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA0963 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_CC1, V_CC2	Supply Voltages	5.0	V
V_ref	Reference Voltage	2.6 to 3.5	V
V_mode	Power Control Voltage	3.5	V
P_IN	RF Input Power	+10	dBm
T_STG	Storage Temperature	-55 to +150

Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

RMPA0963 Features

` 38% CDMA/WCDMA efficiency at +28 dBm Pout
` 14% CDMAA/WCDMA efficiency (80 mA total current) at +16 dBm Pout
` Meets HSDPA performance requirements
` Linear operation in low-power mode up to +19 dBm
` 50% AMPS mode efficiency at +31 dBm Pout
` Low quiescent current (Iccq): 20 mA in low-power mode
` Single positive-supply operation with low power and shutdown modes
• 3.4V typical Vcc operation
• Low Vref (2.85V) compatible with advanced handset chipsets
` Compact Lead-free compliant LCC package (4.0 X 4.0 x 1.5 mm nominal)
` Industry standard pinout
` Internally matched to 50 Ohms and DC blocked RF input/output
` Meets IS-95/CDMA2000-1XRTT/WCDMA performance requirements

RMPA0965 Parameters

Technical/Catalog Information	RMPA0965
Vendor	Fairchild Semiconductor (VA)
Category	RF and RFID
Package / Case	8-LCC
Voltage - Supply	3V ~ 4.2V
Current - Supply	60mA
Gain	30dB
Frequency	824MHz ~ 849MHz
RF Type	Cellular, CDMA, CDMA2000, AMPS, IS-95, HSDPA
Packaging	Cut Tape (CT)
Noise Figure	4dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA0965 RMPA0965 RMPA0965CT ND RMPA0965CTND RMPA0965CT

RMPA0965 General Description

The RMPA0965 power amplifier module (PAM) is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA0965 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_CC1, V_CC2	Supply Voltages	5.0	V
V_ref	Reference Voltage	2.6 to 3.5	V
V_mode	Power Control Voltage	3.5	V
P_IN	RF Input Power	+10	dBm
T_STG	Storage Temperature	-55 to +150

Note:
1:No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA0965 Features

• Single positive-supply operation with low power and shutdown modes
• 40% CDMA efficiency at +28 dBm average output power
• 52% AMPS mode efficiency at +31 dBm output power
• Compact LCC package ( 3.0 x 3.0 x 1.0 mm)
• Internally matched to 50 and DC blocked RF input/ output
• Meets CDMA2000-1XRTT performance requirements

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