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RMPA2000-58, RMPA2059, RMPA2259

Table of contents:
Info of RMPA2000-58
Info of RMPA2059
Info of RMPA2259

RMPA2000-58, RMPA2059, RMPA2259 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:RF and RFID Package Cooled:QFP12 D/C:00+

RMPA2000-58, RMPA2059, RMPA2259 Datasheet download

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Part Number: RMPA2259

Category: RF and RFID

MFG: Fairchild Semiconductor (VA)

Package Cooled: QFP12

D/C: 00+

Description: IC MOD RF POWER AMP 10PIN 4X4LCC

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RMPA2059 Parameters

Technical/Catalog Information	RMPA2059
Vendor	Fairchild Semiconductor
Category	RF and RFID
Package / Case	10-LCC
Voltage - Supply	3.1V ~ 4.5V
Current - Supply	80mA
Gain	26dB
Frequency	1.92GHz ~ 1.98GHz
RF Type	W-CDMA
Packaging	Tape & Reel (TR)
Noise Figure	3dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA2059 RMPA2059

RMPA2059 General Description

The RMPA2059 power amplifier module (PAM) is designed for WCDMA applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA2059 Maximum Ratings

Symbol	Parameter	Min	Max	Units
V_CC1, V_CC2	Supply Voltages	0	5.0	V
V_ref	Reference Voltage	2.7	5.0	V
V_mode	Power Control Voltage	0	3.0	V
P_in	RF Input Power		+5	dBm
T_STG	Storage Temperature	-55	+150

Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA2059 Features

• 40% CDMA efficiency at +27dBm average output power
• Single positive-supply operation and low power and shutdown modes
• Meets UTMS/WCDMA and HSDPA performance requirements
• Compact Lead-free compliant LCC package
- 4.0 x 4.0 x 1.5 mm
• Industry standard pinout
• Internally matched to 50 and DC blocked RF input/ output

RMPA2259 Parameters

Technical/Catalog Information	RMPA2259
Vendor	Fairchild Semiconductor (VA)
Category	RF and RFID
Package / Case	10-LCC
Voltage - Supply	3V ~ 4.2V
Current - Supply	50mA
Gain	24dB
Frequency	1.92GHz ~ 1.98GHz
RF Type	W-CDMA
Packaging	Cut Tape (CT)
Noise Figure	3dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA2259 RMPA2259 RMPA2259CT ND RMPA2259CTND RMPA2259CT

RMPA2259 General Description

The RMPA2259 power amplifier module (PAM) is designed for WCDMA/UTMS and HSDPA applications. The 2-stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA2259 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_CC1, V_CC2	Supply Voltages	5.0	V
V_ref	Reference Voltage	2.6 to 3.5	V
V_mode	Power Control Voltage	3.5	V
P_IN	RF Input Power	+10	dBm
T_STG	Storage Temperature	-55 to +150

Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA2259 Features

• 40% CDMA efficiency at +28dBm average output power
• Single positive-supply operation and low power and shutdown modes
• Meets WCDMA/UTMS and HSDPA performance requirements
• Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm
• Industry standard pinout
• Internally matched to 50 and DC blocked RF input/ output

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