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RMPA2451B-58, RMPA2453-251-TB, RMPA2550

RMPA2451B-58, RMPA2453-251-TB, RMPA2550 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:RF and RFID  Package Cooled:12  D/C:QFN

RMPA2451B-58, RMPA2453-251-TB, RMPA2550 Picture

RMPA2451B-58, RMPA2453-251-TB, RMPA2550 Datasheet download

Five Points

Part Number: RMPA2451B-58

Category: RF and RFID

MFG: Fairchild Semiconductor (VA)

Package Cooled: 12

D/C: QFN

Description: IC MOD RF POWER AMP 20PIN 3X4QFN

 

 
 
 
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About RMPA0913C-58

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Datasheet: RMPA0913C-58

File Size: 263177 KB

Manufacturer: ETC [ETC]

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About RMPA0913C-58

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Datasheet: RMPA0913C-58

File Size: 263177 KB

Manufacturer: ETC [ETC]

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About RMPA2550

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Datasheet: RMPA2550

File Size: 858195 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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RMPA2550 Parameters

Technical/Catalog InformationRMPA2550
VendorFairchild Semiconductor (VA)
CategoryRF and RFID
Package / Case20-QFN
Voltage - Supply3V ~ 3.6V
Current - Supply250mA
Gain26dB
Frequency2.4GHz ~ 2.5GHz, 5.15GHz ~ 5.85GHz
RF Type802.11/Wi-Fi, WLAN
PackagingCut Tape (CT)
Noise Figure-
P1db-
Test Frequency-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RMPA2550
RMPA2550
RMPA2550CT ND
RMPA2550CTND
RMPA2550CT

RMPA2550 General Description

The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.

RMPA2550 Maximum Ratings

Symbol Parameter Value Units
VC Positive Supply Voltage 5 V
IC2.4, IC5.0 Supply Current
IC2.4
IC5.0
820
700
mA
mA
VM Positive Bias Voltage 4.0 V
VL
Logic Voltage 5 V
PIN
RF Input Power 10 dBm
TCASE
Case Operating Temperature -40 to +85
TSTG
Storage Temperature -55 to +150
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA2550 Features

• Dual band operation in a single package design
• 26 dB modulated gain 2.4 to 2.5 GHz band
• 27 dB modulated gain 5.15 to 5.85 GHz band
• 26 dBm output power @ 1 dB compression both frequency bands
• 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
• 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
• 3.3 V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic control)
• Separate integrated power detectors with 20 dB dynamic range
• Low profile 20 pin, 3 x 4 x 0.9 mm standard QFN leadless package
• Internally matched to 50 ohms
• Optimized for use in 802.11a/b/g applications

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