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SDB10S30, SDB20S30, SDB3101

SDB10S30, SDB20S30, SDB3101 Selling Leads, Datasheet

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  Package Cooled:P-TO220-3-45  D/C:08+/09+

SDB10S30, SDB20S30, SDB3101 Picture

SDB10S30, SDB20S30, SDB3101 Datasheet download

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Part Number: SDB10S30

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: P-TO220-3-45

D/C: 08+/09+

Description: DIODE SCHOTTKY 300V 10A TO-220

 

 
 
 
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SDB10S30 Suppliers

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  • SDB10A40

  • Pack: SOD D/C: 04+& Qty: 1400  Adddate: 2024-04-27
  • Inquire Now
  • Yuexunfa Electronics   China
    Contact: Ms.linlinda   MSN:yanxuan5299@hotmail.com
    Tel: 86-755-83778358
    Fax: 86-755-83778378
    (18)

About SDB10S30

PDF/DataSheet Download

Datasheet: SDB10S30

File Size: 633806 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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SDB20S30 Suppliers

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  • SDB10A40

  • Pack: SOD D/C: 04+& Qty: 1400  Adddate: 2024-04-27
  • Inquire Now
  • Yuexunfa Electronics   China
    Contact: Ms.linlinda   MSN:yanxuan5299@hotmail.com
    Tel: 86-755-83778358
    Fax: 86-755-83778378
    (18)

About SDB20S30

PDF/DataSheet Download

Datasheet: SDB20S30

File Size: 222156 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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SDB3101 Suppliers

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  • SDB10A40

  • Pack: SOD D/C: 04+& Qty: 1400  Adddate: 2024-04-27
  • Inquire Now
  • Yuexunfa Electronics   China
    Contact: Ms.linlinda   MSN:yanxuan5299@hotmail.com
    Tel: 86-755-83778358
    Fax: 86-755-83778378
    (18)

About SDB3101

PDF/DataSheet Download

Datasheet: SDB3101

File Size: 52380 KB

Manufacturer: AUK [AUK corp]

Download : Click here to Download

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SDB10S30 Maximum Ratings

Parameter
Symbol
Value
Unit
Continuous forward current, TC=100
IF
10
A
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave
TC=25, tp=10ms
IFSM
36
Repetitive peak forward current
Tj=150, TC=100, D=0.1
IFRM
45
Non repetitive peak forward current
tp=10µs, TC=25
IFMAX
100
i 2t value, TC=25, tp=10ms
i2dt
6.5
A²s
Repetitive peak reverse voltage
VRRM
300
V
Surge peak reverse voltage
VRSM
300
Power dissipation, TC=25
Ptot
65
W
Operating and storage temperature
Tj , Tstg
-55... +175

SDB10S30 Features

· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· No forward recovery

SDB20S30 Parameters

Technical/Catalog InformationSDB20S30
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Diode Type Silicon Carbide
Diode Configuration1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)300V
Current - Average Rectified (Io) (per Diode)10A (DC)
Voltage - Forward (Vf) (Max) @ If1.7V @ 10A
Current - Reverse Leakage @ Vr200A @ 300V
Reverse Recovery Time (trr)0ns
SpeedNo Recovery Time > 500mA (Io)
Mounting TypeSurface Mount
Package / CasePG-TO263
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SDB20S30
SDB20S30

SDB20S30 Maximum Ratings

                                       Parameter
Symbol
Value
Unit
Continuous forward current, TC=100
IF
10
A
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave
TC=25 , tp=10ms
IFSM
36
Repetitive peak forward current
Tj=150 , TC=100 , D=0.1
IFRM
45
Non repetitive peak forward current
tp=10µs, TC=25
IFMAX
100
i 2t value, TC=25 , tp=10ms
i2dt
6.5
A²s
Repetitive peak reverse voltage
VRRM
300
V
Surge peak reverse voltage
VRSM
300
Power dissipation, single diode mode, TC=25
Ptot
65
W
Operating and storage temperature
Tj , Tstg
-55... +175

SDB20S30 Features

· Revolutionary semiconductor material - Silicon Carbide
·Switching behavior benchmark
· No reverse recovery
·No temperature influence on the switching behavior
· No forward recovery

SDB3101 General Description

High Current Capability and Low Forward Voltage Drop
 
This production is enhanced with lower VF and higher surge to provide lower power loss and higher efficiency. Also this production provides the ultimate efficiency in power conversion and power switching applications. The applications are power supply output rectifications and SMPS applications

SDB3101 Maximum Ratings

Characteristic
Symbol
Ratings
Unit
Reverse voltage
VR
30
V
Repetitive peak forward current
IFRM*
0.5
A
Forward current
IF
0.2
A
Non-repetitive peak forward current(10ms)
IFSM
2
A
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ~ 150
°C

SDB3101 Features

• Low power rectified
• Silicon epitaxial type
• High reliability

SDB3101 Connection Diagram

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