Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Surge non repetitive forward current, sine halfwave TC=25, tp=10ms
IFSM
36
Repetitive peak forward current Tj=150, TC=100, D=0.1
IFRM
45
Non repetitive peak forward current tp=10µs, TC=25
IFMAX
100
i 2t value, TC=25, tp=10ms
i2dt
6.5
A²s
Repetitive peak reverse voltage
VRRM
300
V
Surge peak reverse voltage
VRSM
300
Power dissipation, TC=25
Ptot
65
W
Operating and storage temperature
Tj , Tstg
-55... +175
SDB10S30 Features
· Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery · No temperature influence on the switching behavior · No forward recovery
SDB20S30 Parameters
Technical/Catalog Information
SDB20S30
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Diode Type
Silicon Carbide
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
300V
Current - Average Rectified (Io) (per Diode)
10A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7V @ 10A
Current - Reverse Leakage @ Vr
200A @ 300V
Reverse Recovery Time (trr)
0ns
Speed
No Recovery Time > 500mA (Io)
Mounting Type
Surface Mount
Package / Case
PG-TO263
Packaging
Tape & Reel (TR)
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
SDB20S30 SDB20S30
SDB20S30 Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous forward current, TC=100
IF
10
A
RMS forward current, f=50Hz
IFRMS
14
Surge non repetitive forward current, sine halfwave TC=25 , tp=10ms
IFSM
36
Repetitive peak forward current Tj=150 , TC=100 , D=0.1
IFRM
45
Non repetitive peak forward current tp=10µs, TC=25
IFMAX
100
i 2t value, TC=25 , tp=10ms
i2dt
6.5
A²s
Repetitive peak reverse voltage
VRRM
300
V
Surge peak reverse voltage
VRSM
300
Power dissipation, single diode mode, TC=25
Ptot
65
W
Operating and storage temperature
Tj , Tstg
-55... +175
SDB20S30 Features
· Revolutionary semiconductor material - Silicon Carbide ·Switching behavior benchmark · No reverse recovery ·No temperature influence on the switching behavior · No forward recovery
SDB3101 General Description
High Current Capability and Low Forward Voltage Drop
This production is enhanced with lower VF and higher surge to provide lower power loss and higher efficiency. Also this production provides the ultimate efficiency in power conversion and power switching applications. The applications are power supply output rectifications and SMPS applications
SDB3101 Maximum Ratings
Characteristic
Symbol
Ratings
Unit
Reverse voltage
VR
30
V
Repetitive peak forward current
IFRM*
0.5
A
Forward current
IF
0.2
A
Non-repetitive peak forward current(10ms)
IFSM
2
A
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ~ 150
°C
SDB3101 Features
• Low power rectified • Silicon epitaxial type • High reliability