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SGB-4533, SGB-6433, SGB-6533

Table of contents:
Info of SGB-4533
Info of SGB-6433
Info of SGB-6533

SGB-4533, SGB-6433, SGB-6533 Selling Leads, Datasheet

MFG:SIRENZA Package Cooled:QFN-16 D/C:03+

SGB-4533, SGB-6433, SGB-6533 Datasheet download

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Part Number: SGB-4533

MFG: SIRENZA

Package Cooled: QFN-16

D/C: 03+

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SGB-4533 General Description

Sirenza Microdevices' SGB-4533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4533 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.

SGB-4533 Maximum Ratings

Parameter	Value	Unit
Current (Ic total)	150	mA
Device Voltage (V_D)	2	V
Power Dissipation	0.4	W
Operating Lead Temperature (T_L)	-40 to +85	^ºC
RF Input Power	20	dBm
Storage Temperature Range	40 to +150	°C
Operating Junction Temperature (TJ)	+150	°C

SGB-4533 Features

• High reliability SiGe HBT Technology
• Robust Class 1C ESD
• Simple and small size
• P1dB = 9.8 dBm @ 1950MHz
• IP3 = 23.5 dBm @ 1950MHz
• Low Thermal Resistance = 50 C/W

SGB-4533 Typical Application

• 3V Battery operated applications
• LO buffer amp
• RF pre-driver and RF receive path

SGB-6433 General Description

Sirenza Microdevices' SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.

SGB-6433 Maximum Ratings

Parameter	Value	Unit
Current (Ic total)	150	mA
Device Voltage (VD)	6.5	V
Power Dissipation	0.75	W
Operating Lead Temperature (TL)	-40 to +85	ºC
RF Input Power	20	dBm
Storage Temperature Range	40 to +150	°C
Operating Junction Temperature (TJ)	+150	°C

SGB-6433 Features

• High reliability SiGe HBT Technology
• Robust Class 1C ESD
• Simple and small size
• P1dB = 18.5 dBm @ 1950MHz
• IP3 = 31 dBm @ 1950MHz
• Low Thermal Resistance = 60 C/W

SGB-6433 Typical Application

• 5V applications
• LO buffer amp
• RF pre-driver and RF receive path

SGB-6533 General Description

Sirenza Microdevices! SGB-6533 is a highperformance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6533 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.

This product is available in a RoHS Compliant and Green package with matte tin finish, designated by the "Z"package suffix.

SGB-6533 Maximum Ratings

Parameters	Value	Unit
Current (Ic total)	150	mA
Device Voltage (V_D)	6.5	V
Power Dissipation	0.75	W
Operating Lead Temperature (T_L)	-40 to +85
RF Input Power, Zload = 50 ohm	15	dBm
RF Input Power, Zload > 10:1 VSWR	7	dBm
Storage Temperature Range	-40 to +150
Operating Junction Temperature (T_J)	+150

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation the device voltage and current must not exceed the maximum operating values specified in the table on page one.Bias conditions should also satisfy the following expression:I_DV_D < (T_J - T_L ) / R_TH, j-l

SGB-6533 Features

· Available in Lead Free, RoHS compliant, & Green Packaging
· High reliability SiGe HBT Technology
· Robust Class 1C ESD
· Simple and small size
· P1dB = 18.5 dBm @ 1950MHz
· IP3 = 32 dBm @ 1950MHz
· Low Thermal Resistance = 60 C/W

SGB-6533 Typical Application

· 5V applications
· LO buffer amp
· RF pre-driver and RF receive path

SGB-6533 Connection Diagram

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