SGB15N60, SGB15N60HS, SGB20N60 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:P-TO263-3-2 D/C:08+/09+
SGB15N60, SGB15N60HS, SGB20N60 Datasheet download
Part Number: SGB15N60
MFG: INFINEON
Package Cooled: P-TO263-3-2
D/C: 08+/09+
SGB15N60, SGB15N60HS, SGB20N60
- Table of contents:
Info of SGB15N60
Info of SGB15N60HS
Info of SGB20N60
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About SGB15N60
PDF/DataSheet Download
Datasheet: SGB15N60
File Size: 425904 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About SGB15N60HS
PDF/DataSheet Download
Datasheet: SGB15N60HS
File Size: 333024 KB
Manufacturer: Infineon Technologies AG
Download : Click here to Download
About SGB20N60
PDF/DataSheet Download
Datasheet: SGB20N60
File Size: 282478 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
SGB15N60 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
31 15 |
A
|
|
Pulsed collector current, tp limited by Tjmax |
I Cpul s |
62 | |
|
Turn off safe operating area VCE 600V, Tj 150°C |
- |
62
| |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C |
EAS |
85 |
mJ |
|
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
|
Power dissipation TC = 25°C |
P t o t |
139 |
W |
|
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
SGB15N60HS Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current TC = 25°C TC = 100°C |
IC | 27 15 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpul s | 60 | |
| Turn off safe operating area VCE 600V, Tj 150°C |
- | 60 | |
| Gate-emitter voltagestatic transient (tp<1s, D<0.05) |
VGE | ±20 ±30 |
V |
| Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C |
EAS | 70 | mJ |
| Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150°C |
tSC | 10 | s |
| Power dissipation TC = 25°C |
Pt o t | 138 | W |
| Operating junction and storage temperature | Tj , Tstg | -55...+150 | °C |
| Time limited operating junction temperature for t < 150h | Tj ( t l ) | 175 | |
| Soldering temperature (reflow soldering, MSL1) | - | 220 |
SGB15N60HS Features
• 30% lower Eoff compared to previous generation
• Short circuit withstand time 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
• Short circuit withstand time 10 s
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
SGB20N60 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCE |
600 |
V |
|
DC collector current TC = 25°C TC = 100°C |
IC |
40 20 |
A
|
|
Pulsed collector current, tp limited by Tjmax |
I Cpul s |
80 | |
|
Turn off safe operating area VCE 600V, Tj 150°C |
- |
80
| |
|
Gate-emitter voltage |
VGE |
±20 |
V |
|
Avalanche energy, single pulse IC = 4 A, VCC = 50 V, RGE = 25 Ω, start at Tj = 25°C |
EAS |
115 |
mJ |
|
Short circuit withstand time1) VGE = 15V, VCC 600V, Tj 150°C |
tSC |
10 |
µs |
|
Power dissipationTC = 25°C |
P t o t |
179 |
W |
|
Operating junction and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
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