SGB-2233, SGB-2433, SGB250AA80 Selling Leads, Datasheet
MFG:SIRENZA Package Cooled:QFN-16 D/C:03+
SGB-2233, SGB-2433, SGB250AA80 Datasheet download
Part Number: SGB-2233
MFG: SIRENZA
Package Cooled: QFN-16
D/C: 03+
SGB-2233, SGB-2433, SGB250AA80
- Table of contents:
Info of SGB-2233
Info of SGB-2433
Info of SGB250AA80
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About SGB-2233
PDF/DataSheet Download
Datasheet: SGB-2233
File Size: 199057 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SGB-2433
PDF/DataSheet Download
Datasheet: SGB-2433
File Size: 204126 KB
Manufacturer: STANFORD [Stanford Microdevices]
Download : Click here to Download
About SGB02N120
PDF/DataSheet Download
Datasheet: SGB02N120
File Size: 399002 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
SGB-2233 General Description
Sirenza Microdevices' SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2233 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-2233 Maximum Ratings
|
Parameter |
Value |
Unit |
|
Current (Ic total) |
60 |
mA |
|
Device Voltage (VD) |
5 |
V |
|
Power Dissipation |
0.2 |
W |
|
Operating Lead Temperature (TL) |
-40 to +85
|
ºC
|
|
RF Input Power |
20 |
dBm |
|
Storage Temperature Range |
40 to +150 |
°C |
|
Operating Junction Temperature (TJ) |
+150 |
°C |
SGB-2233 Features
• High reliability SiGe HBT Technology
• Robust Class 1C ESD
• Simple and small size
• P1dB = 6.7 dBm @ 1950MHz
• IP3 = 19.0 dBm @ 1950MHz
• Low Thermal Resistance = 110 C/W
• Robust Class 1C ESD
• Simple and small size
• P1dB = 6.7 dBm @ 1950MHz
• IP3 = 19.0 dBm @ 1950MHz
• Low Thermal Resistance = 110 C/W
SGB-2233 Typical Application
• 3V Battery operated applications
• LO buffer amp
• RF pre-driver and RF receive path
• LO buffer amp
• RF pre-driver and RF receive path
SGB-2433 General Description
Sirenza Microdevices' SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-2433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-2433 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
SGB-2433 Maximum Ratings
|
Parameter |
Value |
Unit |
|
Current (Ic total) |
60 |
mA |
|
Device Voltage (VD) |
5 |
V |
|
Power Dissipation |
0.2 |
W |
|
Operating Lead Temperature (TL) |
-40 to +85
|
ºC
|
|
RF Input Power |
20 |
dBm |
|
Storage Temperature Range |
40 to +150 |
°C |
|
Operating Junction Temperature (TJ) |
+150 |
°C |
SGB-2433 Features
• High reliability SiGe HBT Technology
• Robust Class 1C ESD
• Simple and small size
• P1dB = 6.9 dBm @ 1950MHz
• IP3 = 18.0 dBm @ 1950MHz
• Low Thermal Resistance = 110 C/W
• Robust Class 1C ESD
• Simple and small size
• P1dB = 6.9 dBm @ 1950MHz
• IP3 = 18.0 dBm @ 1950MHz
• Low Thermal Resistance = 110 C/W
SGB-2433 Typical Application
• 3V Battery operated applications
• LO buffer amp
• RF pre-driver and RF receive path
• LO buffer amp
• RF pre-driver and RF receive path
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