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SGU2N60UF, SGU2N60UFD, SGU6N60UF

SGU2N60UF, SGU2N60UFD, SGU6N60UF Selling Leads, Datasheet

MFG:Fairchild  Package Cooled:TO  D/C:07+

SGU2N60UF, SGU2N60UFD, SGU6N60UF Picture

SGU2N60UF, SGU2N60UFD, SGU6N60UF Datasheet download

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Part Number: SGU2N60UF

 

MFG: Fairchild

Package Cooled: TO

D/C: 07+

 

 

 
 
 
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About SGU2N60UF

PDF/DataSheet Download

Datasheet: SGU2N60UF

File Size: 504889 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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SGU2N60UFD Suppliers

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About SGU2N60UFD

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Datasheet: SGU2N60UFD

File Size: 549492 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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SGU6N60UF Suppliers

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About SGU6N60UF

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Datasheet: SGU6N60UF

File Size: 518939 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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SGU2N60UF General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.

The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

SGU2N60UF Maximum Ratings

Symbol Description SGH2N60RUF Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ±20 V
IC Collector Current @ TC = 25 2.4 A
Collector Current @ TC = 100 1.2 A
I CM(1) Pulsed Collector Current 10 A
PD Maximum Power Dissipation @ TC = 25 25 W
Maximum Power Dissipation @ TC = 100 10 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300

SGU2N60UF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGU2N60UFD General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

SGU2N60UFD Maximum Ratings

Symbol Description SGH20N120RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ±20 V
IC Collector Current @ TC = 25 2.4 A
Collector Current @ TC = 100 1.2 A
I CM(1) Pulsed Collector Current 10 A
IF Diode Continuous Forward Current @ TC = 100 1.5 A
IFM Diode Maximum Forward Current 12 A
PD Maximum Power Dissipation @ TC = 25 25 W
Maximum Power Dissipation @ TC = 100 10 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300

SGU2N60UFD Features

• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 45ns (typ.)

SGU2N60UFD Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGU6N60UF General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.

The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

SGU6N60UF Maximum Ratings

Symbol Description SGH6N60RUF Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ±20 V
IC Collector Current @ TC = 25 6 A
Collector Current @ TC = 100 3 A
I CM(1) Pulsed Collector Current 25 A
PD Maximum Power Dissipation @ TC = 25 30 W
Maximum Power Dissipation @ TC = 100 12 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300

SGU6N60UF Features

• High speed switching
• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 3A
• High input impedance

SGU6N60UF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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