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SGU15N40L

Features: • High input impedance• High peak current capability (130A)• Easy gate driveApplicationStrobe flash.Specifications Symbol Description SGP23N60RUFD Units VCES Collector-Emitter Voltage 400 V VGES Gate-Emitter Voltage ±6 V I CM(1) Pulsed Collector ...

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SeekIC No. : 004489569 Detail

SGU15N40L: Features: • High input impedance• High peak current capability (130A)• Easy gate driveApplicationStrobe flash.Specifications Symbol Description SGP23N60RUFD Units VCES ...

SGU15N40L Data Sheet

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Part Number:
SGU15N40L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• High input impedance
• High peak current capability (130A)
• Easy gate drive


Application

Strobe flash.


Specifications

Symbol Description SGP23N60RUFD Units
VCES Collector-Emitter Voltage 400 V
VGES Gate-Emitter Voltage ±6 V
I CM(1) Pulsed Collector Current 130 A
PC Maximum Power Dissipation @ TC = 25 45 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds		 300



Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. SGU15N40L also have wide noise immunity.

These SGU15N40L devices are very suitable for strobe applications




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