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SI1016, SI1016X, SI1016X-T1

SI1016, SI1016X, SI1016X-T1 Selling Leads, Datasheet

MFG:LATTICE  Package Cooled:QFP  D/C:08+

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SI1016, SI1016X, SI1016X-T1 Datasheet download

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Part Number: SI1016

 

MFG: LATTICE

Package Cooled: QFP

D/C: 08+

 

 

 
 
 
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  • SI1012R-T1-E3

  • D/C: 01+&   Adddate: 2024-04-28
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About SI1016X

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Datasheet: SI1016X

File Size: 54686 KB

Manufacturer: VISAY [Vishay Siliconix]

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SI1016X Suppliers

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  • SI1012R-T1-E3

  • D/C: 01+&   Adddate: 2024-04-28
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About SI1016X

PDF/DataSheet Download

Datasheet: SI1016X

File Size: 54686 KB

Manufacturer: VISAY [Vishay Siliconix]

Download : Click here to Download

Related PDF Download

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SI1016X-T1 Suppliers

More SI1016X-T1 Suppliers

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  • SI1012R-T1-E3

  • D/C: 01+&   Adddate: 2024-04-28
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About SI1012R

PDF/DataSheet Download

Datasheet: SI1012R

File Size: 51789 KB

Manufacturer: VISAY [Vishay Siliconix]

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SI1016X Maximum Ratings

Parameter Symbol N-Channel P-Channel Unit
5 secs Steady State 5 secs Steady State
Drain-Source Voltage VDS 20 −20 V
Gate-Source Voltage VGS ±6
Continuous Drain Current (TJ = 150)a TA = 25 ID 515 485 -390 -370 A
TA = 85 370 350 -280 -265
Continuous Source Current (Diode Conduction)a IS 450 380 -450 -380
Pulsed Drain Currentb IDM 4.0 -3.0
Maximum Power Dissipationa TA = 25 PD 280 250 280 250 W
TA = 85 145 130 145 130
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150  
Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.

SI1016X Features

` Very Small Footprint
` High-Side Switching
` Low On-Resistance:
    N-Channel, 0.7
    P-Channel, 1.2
` Low Threshold: ±0.8 V (typ)
` Fast Swtiching Speed: 14 ns
` 1.8-V Operation
` Gate-Source ESD Protection

SI1016X Typical Application

· Replace Digital Transistor, Level-Shifter
· Battery Operated Systems
· Power Supply Converter Circuits
· Load/Power Switching Cell Phones, Pagers

SI1016X Connection Diagram

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