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SLE4442, SLE4501, SLE5542

Table of contents:
Info of SLE4442
Info of SLE4501
Info of SLE5542

SLE4442, SLE4501, SLE5542 Selling Leads, Datasheet

MFG:INFINEON Package Cooled:0 D/C:08+

SLE4442, SLE4501, SLE5542 Datasheet download

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Part Number: SLE4442

MFG: INFINEON

Package Cooled: 0

D/C: 08+

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SLE4442 General Description

The SLE 4432 consists of 256 x 8 bit EEPROM main memory and a 32-bit protection memory with PROM functionality. The main memory is erased and written byte by byte. When erased, all 8 bits of a data byte are set to logical one. When written, the information in the individual EEPROM cells is, according to the input data, altered bit by bit to logical zeros (logical AND between the old and the new data in the EEPROM). Normally a data change consists of an erase and write procedure. It depends on the contents of the data byte in the main memory and the new data byte whether the EEPROM is really erased and/or written. If none of the 8 bits in the addressed byte requires a zeroto- one transition the erase access will be suppressed. Vice versa the write access will be suppressed if no one-to-zero transition is necessary. The write and the erase operation takes at least 2.5 ms each.

Each of the first 32 bytes can be irreversibly protected against data change by writing the corresponding bit in the protection memory. Each data byte in this address range is assigned to one bit of the protection memory and has the same address as the data byte in the main memory which it is assigned to. Once written the protection bit cannot be erased (PROM).

Additionally to the above functions the SLE 4442 provides a security code logic which controls the write/erase access to the memory. For this purpose the SLE 4442 contains a 4-byte security memory with an Error Counter EC (bit 0 to bit 2) and 3 bytes reference data. These 3 bytes as a whole are called Programmable Security Code (PSC). After power on the whole memory, except for the reference data, can only be read. Only after a successful comparison of verification data with the internal reference data the memory has the identical access functionality of the SLE 4432 until the power is switched off. After three successive unsuccessful comparisons the Error Counter blocks any subsequent attempt, and hence any possibility to write and erase.

SLE4442 Maximum Ratings

Parameter	Symbol	Limit Values		Unit
Parameter	Symbol	min	max	Unit
Supply voltage	V_CC	-0.3	6.0	V
Input voltage (any pin)	V_I	-0.3	6.0	V
Storage temperature	T_stg	40	125
Power dissipation	P_tot		70	mW

SLE4442 Features

256 * 8-bit EEPROM organization
Byte-wise addressing
Irreversible byte-wise write protection of lowest 32 addresses (Byte 0 ... 31)
32 * 1-bit organization of protection memory
Two-wire link protocol
End of processing indicated at data output
Answer-to-Reset acc. to ISO standard 7816-3
Programming time 2.5 ms per byte for both erasing and writing
Minimum of 10⁴ write/erase cycles¹⁾
Data retention for minimum of ten years¹⁾
Contact configuration and serial interface in accordance with ISO standard 7816 (synchronous transmission)

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