MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO220-3-31 D/C:2008+
SPA03N60C3, SPA04N50C3, SPA04N60C2 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: P-TO220-3-31
D/C: 2008+
Description: MOSFET N-CH 560V 4.5A TO220FP
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PDF/DataSheet Download
Datasheet: SPA03N60C3
File Size: 315633 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPA04N50C3
File Size: 299719 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPA04N60C2
File Size: 168222 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPA03N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 3.2A |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 29.7W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPA03N60C3 SPA03N60C3 SPA03N60C3IN ND SPA03N60C3INND SPA03N60C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 2 3.2 |
3.21) 21) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 9.6 | 9.6 | A |
| Avalanche energy, single pulse ID=2.4A, VDD=50V |
EAS | 100 | 100 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=3.2A, VDD=50V |
EAR | 0.2 | 0.2 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 3.2 | 3.2 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 38 | 29.7 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
| Technical/Catalog Information | SPA04N50C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 470pF @ 25V |
| Power - Max | 31W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPA04N50C3 SPA04N50C3 SPA04N50C3IN ND SPA04N50C3INND SPA04N50C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
4.51) 2.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | 13.5 | A |
| Avalanche energy, single pulse ID=3.4A, VDD=50V |
EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V |
EAR | 0.4 | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 400 V, ID = 4.5 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
4.51) 2.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 9 | 9 | A |
| Avalanche energy, single pulse ID=3.6A, VDD=50V |
EAS | 130 | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V |
EAR | 0.4 | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
| Reverse diode dv/dt IS = 4.5 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
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