MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-220F D/C:TO-220F
SPA11N80C3, SPA-1218, SPA12N50C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO-220F
D/C: TO-220F
Description: MOSFET N-CH 560V 11.6A TO220FP
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PDF/DataSheet Download
Datasheet: SPA11N80C3
File Size: 259873 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPA-1218
File Size: 213816 KB
Manufacturer: STANFORD [Stanford Microdevices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPA12N50C3
File Size: 374517 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPA11N80C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 7.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1600pF @ 100V |
| Power - Max | 41W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 85nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPA11N80C3 SPA11N80C3 SPA11N80C3IN ND SPA11N80C3INND SPA11N80C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11 7.1 |
111) 7.11) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 33 | 33 | A |
| Avalanche energy, single pulse ID=2.2A, VDD=50V |
EAS | 470 | 470 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V |
EAR | 0.2 | 0.2 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 11 | 11 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 156 | 41 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
Stanford Microdevices' SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
Operation of this device above any one of these parameters may cause permanent damage.
Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l
| Parameter | Value | Unit |
| Supply Current (ID) | 750 | mA |
| Device Voltage (VD) | 6.0 | V |
| Power Dissipation | 4.0 | W |
| Operating Temperature (TOP) | -40 to +150 | ºC |
| RF Input Power | +500 | mW |
| Storage Temperature Range | -40 to +150 | ºC |
| Operating Junction Temperature (TJ) | +150 | ºC |
| Technical/Catalog Information | SPA12N50C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 11.6A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 33W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPA12N50C3 SPA12N50C3 SPA12N50C3IN ND SPA12N50C3INND SPA12N50C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B_I | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11.6 7 |
11.61) 71) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 34.8 | 34.8 | A |
| Avalanche energy, single pulse ID=2.5A, VDD=50V |
EAS | 340 | 340 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V |
EAR | 0.6 | 0.6 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 11.6 | 11.6 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 125 | 33 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 400 V, ID = 11.6 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
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