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SPA07N65C3, SPA08N50C3, SPA08N80C3

Table of contents:
Info of SPA07N65C3
Info of SPA08N50C3
Info of SPA08N80C3

SPA07N65C3, SPA08N50C3, SPA08N80C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+

SPA07N65C3, SPA08N50C3, SPA08N80C3 Datasheet download

Five Points

Part Number: SPA07N65C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-220

D/C: 08+

Description: MOSFET N-CH 800V 8A TO220FP

Price Break

500

Unit Price

1.67040

Extended Price

835.20

(All prices are in USD) Prices for reference only

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SPA07N65C3 Parameters

Technical/Catalog Information	SPA07N65C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	790pF @ 25V
Power - Max	32W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPA07N65C3 SPA07N65C3 SPA07N65C3IN ND SPA07N65C3INND SPA07N65C3IN

SPA07N65C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_I	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	7.3 4.6	7.3¹) 4.6¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	21.9	21.9	A
Avalanche energy, single pulse I_D=1.5A, V_DD=50V	E_AS	230	230	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=2.5A, V_DD=50V	E_AR	0.5	0.5	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	2.5	2.5	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	83	32	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 7.3 A, T_j = 125 °C	dv/dt	50		V/ns

SPA07N65C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

SPA08N50C3 Parameters

Technical/Catalog Information	SPA08N50C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	7.6A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 25V
Power - Max	32W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	TO-220FP
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPA08N50C3 SPA08N50C3 SPA08N50C3IN ND SPA08N50C3INND SPA08N50C3IN

SPA08N80C3 Parameters

Technical/Catalog Information	SPA08N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	650 mOhm @ 5.1A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 100V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220FP
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPA08N80C3 SPA08N80C3 SPA08N80C3IN ND SPA08N80C3INND SPA08N80C3IN

SPA08N80C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP	SPA	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	8 5.1	8¹) 5.1¹)	A
Pulsed drain current, t_p limited by T_jmax	I_{D puls}	24	24	A
Avalanche energy, single pulse I_D=1.6A, V_DD=50V	E_AS	340	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax2) I_D=8A, V_DD=50V	E_AR	0.2	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	8	8	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	104	40	W
Operating and storage temperature	T_j , T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 640 V, I_D= 8 A, T_j = 125 °C	dv/dt	50		V/ns

²Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPA08N80C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

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