MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO220-3 D/C:2008+
SPP10N10L, SPP11N60C2, SPP11N60C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO220-3
D/C: 2008+
Description: MOSFET N-CH 650V 11A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP02N60C3
File Size: 289482 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP11N60C2
File Size: 164019 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP11N60C3
File Size: 361216 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP10N10L |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Rds On (Max) @ Id, Vgs | 154 mOhm @ 8.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 444pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP10N10L SPP10N10L |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11 7 |
111) 71) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 22 | 22 | A |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 340 | 340 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V |
EAR | 0.6 | 0.6 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 11 | 11 | A |
| Reverse diode dv/dt IS = 11 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 125 | 33 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Technical/Catalog Information | SPP11N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP11N60C3 SPP11N60C3 SPP11N60C3IN ND SPP11N60C3INND SPP11N60C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11 7 |
111) 71) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 33 | 33 | A |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 340 | 340 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V |
EAR | 0.6 | 0.6 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 11 | 11 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 125 | 33 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
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