MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO220-3-1 D/C:2008+
SPP73N03S2L-08, SPP77N06S2-12, SPP80N03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: P-TO220-3-1
D/C: 2008+
Description: MOSFET N-CH 55V 80A TO-220
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PDF/DataSheet Download
Datasheet: SPP73N03S2L-08
File Size: 425746 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP77N06S2-12
File Size: 318837 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP80N03
File Size: 82536 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | SPP73N03S2L-08 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 73A |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 36A, 10V |
| Input Capacitance (Ciss) @ Vds | 1710pF @ 25V |
| Power - Max | 107W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 46.2nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP73N03S2L 08 SPP73N03S2L08 SPP73N03S2L 08IN ND SPP73N03S2L08INND SPP73N03S2L-08IN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 73 62 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =73A, VDD = 25 V, RGS = 25 |
EAS | 170 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 10 | |
| Reverse diode dv/dt IS =73 A, VDS =24, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 107 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 873A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPP77N06S2-12 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 38A, 10V |
| Input Capacitance (Ciss) @ Vds | 2350pF @ 25V |
| Power - Max | 158W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP77N06S2 12 SPP77N06S212 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C |
ID | 80 56 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =-77A, VDD = 25 V, RGS = 25 |
EAS | 280 | mJ |
| Repetitive avalanche energy, limited by Tjmax1) | EAR | 16 | |
| Reverse diode dv/dt IS = 77 A, VDS = 44 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 158 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Defined by design. Not subject to production test.
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | -8.8 -6.2 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -35.2 | |
| Avalanche energy, single pulse ID =-8.8 A, VDD = -25 V, RGS = 25 |
EAS | 70 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 4.2 | |
| Reverse diode dv/dt IS = -8.8 A, VDS = -48 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 42 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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