MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:04+
SPP80N08S2L-07, SPP80N10L, SPP80P06P Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 04+
Description: MOSFET P-CH 60V 80A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP80N08S2L-07
File Size: 317496 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP80N10L
File Size: 111360 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP80P06P
File Size: 98509 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP80N08S2L-07 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 7.1 mOhm @ 67A, 10V |
| Input Capacitance (Ciss) @ Vds | 6820pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 233nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP80N08S2L 07 SPP80N08S2L07 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS = 80 A, VDS = 60 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 135A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Logic Level
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPP80N10L |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 58A, 10V |
| Input Capacitance (Ciss) @ Vds | 4540pF @ 25V |
| Power - Max | 250W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP80N10L SPP80N10L |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 80 58 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 320 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 700 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 25 | |
| Reverse diode dv/dt IS = 80A, VDS = 0 V, di/dt = 200 A/s |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 250 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
· N-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPP80P06P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 64A, 10V |
| Input Capacitance (Ciss) @ Vds | 5033pF @ 25V |
| Power - Max | 340W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 173nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP80P06P SPP80P06P SPP80P06PIN ND SPP80P06PINND SPP80P06PIN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C, 1) TC = 100 °C |
ID | -80 -64 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -320 | |
| Avalanche energy, single pulse ID =-80A, VDD = -25 V, RGS = 25 |
EAS | 823 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 34 | |
| Reverse diode dv/dt IS = -80 A, VDS = -48 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 340 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A
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