MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF D/C:TO
SPW20N60C2, SPW20N60C3, SPW20N60CFD Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF
D/C: TO
Description: MOSFET N-CHAN 650V 20.7A TO-247
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PDF/DataSheet Download
Datasheet: SPW20N60C2
File Size: 125795 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPW20N60C3
File Size: 265082 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPW20N60CFD
File Size: 166217 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPW20N60C2 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13A, 10V |
| Input Capacitance (Ciss) @ Vds | 3000pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 103nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Request Inventory Verification |
| RoHS Status | Request Inventory Verification |
| Other Names | SPW20N60C2 SPW20N60C2 SPW20N60C2IN ND SPW20N60C2INND SPW20N60C2IN |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID |
20 13 |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
40 | |
| Avalanche energy, single pulse ID=10A, VDD=50V |
EAS |
690 |
mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V |
EAR |
1 | |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
A |
| Reverse diode dv/dt IS=20A, VDS=480V, Tj=125°C |
dv/dt |
6 |
V/ns |
| Gate source voltage static |
VGS |
±20 |
V |
| Power dissipation TC = 25 °C |
Ptot |
208 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
| Technical/Catalog Information | SPW20N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 20.7A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 114nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPW20N60C3 SPW20N60C3 SPW20N60C3IN ND SPW20N60C3INND SPW20N60C3IN |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID |
20.7 13.1 |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
62.1 | |
| Avalanche energy, single pulse ID= 10A, VDD=50V |
EAS |
690 |
mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V |
EAR |
1 | |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
A |
| Reverse diode dv/dt IS=20.7A, VDS=480V, Tj=125°C |
dv/dt |
6 |
V/ns |
| Gate source voltage static |
VGS |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
| Power dissipation TC = 25 °C |
Ptot |
208 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
| Technical/Catalog Information | SPW20N60CFD |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 20.7A |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 13.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 208W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 124nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPW20N60CFD SPW20N60CFD SPW20N60CFDIN ND SPW20N60CFDINND SPW20N60CFDIN |
|
Parameter |
Symbol |
Value |
Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID |
20.7 13.1 |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
52 | |
| Avalanche energy, single pulse ID= 10A, VDD=50V |
EAS |
690 |
mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=20A, VDD=50V |
EAR |
1 | |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
20 |
A |
| Reverse diode dv/dt IS=20.7A, VDS=480V, Tj=125°C |
dv/dt |
40 |
V/ns |
| Gate source voltage static |
VGS |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
| Power dissipation TC = 25 °C |
Ptot |
208 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge
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