SPW11N60C2 Selling Leads, Price trend, SPW11N60C2 DataSheet download, circuit diagram from SeekIC.com

Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Improved noise immunitySpecifications Parameter Symbol Value Unit Continuous drain c...

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SeekIC No. : 004501473 Detail

SPW11N60C2: Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Imp...

SPW11N60C2 Data Sheet

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Part Number:: SPW11N60C2
Supply Ability:: 5000

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Upload time: 2024/4/28

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Recent History
What is this?

SPW11N60C3 evaluate
US $1.19 - 2.02 / Piece

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US $1.55 - 2.35 / Piece

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US $1.45 - 2.45 / Piece

MOSFET COOL MOS N-CH 600V 11A

Product Details

Description

Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	11 7	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	22	A
Avalanche energy, single pulse I_D= 5.5A, V_DD=50V	E_AS	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=11A, V_DD=50V	E_AR	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	11	A
Reverse diode dv/dt I_S=11A, V_DS=480V, T_j=125°C	dv/dt	6	V/ns
Gate source voltage static	V_GS	±20	V
Power dissipation TC = 25 °C	P_tot	125	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

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SPW11N60C2

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