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SPW20N60C3/TK20J60U, SPW20N60C5, SPW20N60S5

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Info of SPW20N60C3/TK20J60U
Info of SPW20N60C5
Info of SPW20N60S5

SPW20N60C3/TK20J60U, SPW20N60C5, SPW20N60S5 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:2009+

SPW20N60C3/TK20J60U, SPW20N60C5, SPW20N60S5 Datasheet download

Five Points

Part Number: SPW20N60S5

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO-247

D/C: 2009+

Description: MOSFET N-CH 600V 20A TO-247

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SPW20N60S5 Parameters

Technical/Catalog Information	SPW20N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	190 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	3000pF @ 25V
Power - Max	208W
Packaging	Tube
Gate Charge (Qg) @ Vgs	103nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPW20N60S5 SPW20N60S5 SPW20N60S5IN ND SPW20N60S5INND SPW20N60S5IN

SPW20N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	20 13	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	40	A
Avalanche energy, single pulse I_D= 10A, V_DD=50V	E_AS	690	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=20A, V_DD=50V	E_AR	1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	20	A
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation TC = 25 °C	P_tot	208	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPW20N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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