SSH4N80AS, SSH4N90, SSH4N90AS Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-3P D/C:03+
SSH4N80AS, SSH4N90, SSH4N90AS Datasheet download

Part Number: SSH4N80AS
MFG: FAIRCHILD
Package Cooled: TO-3P
D/C: 03+
MFG:FAIRCHILD Package Cooled:TO-3P D/C:03+
SSH4N80AS, SSH4N90, SSH4N90AS Datasheet download

MFG: FAIRCHILD
Package Cooled: TO-3P
D/C: 03+
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Datasheet: SSH4N80AS
File Size: 289128 KB
Manufacturer:
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Datasheet: SSH4N90
File Size: 273445 KB
Manufacturer:
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Datasheet: SSH4N90AS
File Size: 287865 KB
Manufacturer:
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The SSH4N80AS is one kind of advanced power MOSFET.The SSH6N80AS has some features such as:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:25uA(Max.) @ Vds=800 V;(7)low Rds(on):1.472.
The absolute maximum ratings of SSH6N80AS can be summerized as:(1)drain-to-source voltage:800 V;(2)continuous drain current(Tc=25):4.5A;(3)continuous drain current(Tc=100):2.8 A;(4)drain current-pulsed:18 A;(5)gate-to-source voltage:+-30 V;(6)single pulsed avalanche energy:324 mJ;(7)avalanche current:4.5 A;(8)repetitive avalanche energy:14 mJ;(9)peak diode recovery dv/dt:2.0 V/ns;(10)total power dissipation:140 W;(11)linear derating factor:1.12 W/;(12)operating junction and storage temperature range:-55 to +150.
If you want to get more information about this part,please download the datasheet,thank you! www.chinaicmart.com www.seekic.com
The SSH4N90 has some features:(1)lower RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input capacitance;(6)extended safe operating area;(7)improved high temperature reliability.
Absolute maximum ratings of the SSH4N90 are:(1)drain-source voltage:900 Vdc;(2)continuous drain current Tc=25:4.0 Adc;(3)continuous drain current Tc=100:2.8 Adc;(4)drain current-pulsed:16 Adc;(7)gate-to-source voltage:+-30;(8)single pulsed avalanche energy:280 mJ;(9)avalanche current:10 A;(10)total power dissipation at Tc=25:125 Watts;(11)linear derating factor:1.00 W/;(12)operating and storage:-55 to 150;(13)junction temperature range:-55 to 150;(14)maximum lead temp.for soldering purposes,1/8" from case for 5 seconds:300.
If you want to know more information about this type,please down load the datasheet.
The SSH4N90AS is one kind of advanced power MOSFET.The SSH6N80AS has some features such as:(1)avalanche rugged technology;(2)rugged gate oxide technology;(3)lower input capacitance;(4)improved gate charge;(5)extended safe operating area;(6)lower leakage current:25uA(Max.) @ Vds=900 V;(7)low Rds(on):3.054.
The absolute maximum ratings of SSH4N90AS can be summerized as:(1)drain-to-source voltage:900 V;(2)continuous drain current(Tc=25):4.5A;(3)continuous drain current(Tc=100):2.8 A;(4)drain current-pulsed:18 A;(5)gate-to-source voltage:+-30 V;(6)single pulsed avalanche energy:536 mJ;(7)avalanche current:4.5 A;(8)repetitive avalanche energy:14 mJ;(9)peak diode recovery dv/dt:1.5 V/ns;(10)total power dissipation:140 W;(11)linear derating factor:1.12 W/;(12)operating junction and storage temperature range:-55 to +150.
If you want to get more information about this part,please download the datasheet,thank you! www.chinaicmart.com www.seekic.com
