SSH10N60B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.65 Ohms


Features:

• 10A, 600V, R _DS(on) = 0.8Ω @V_GS = 10 V
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	SSH10N60B	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC = 100°C)	10	A
		6.3	A
IDM	Drain Current - Pulsed (Note 1)	40	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	520	mJ
IAR	Avalanche Current (Note 1)	10	A
EAR	Repetitive Avalanche Energy (Note 1)	19.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C)                     - Derate above 25°C	193	W
		1.54	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors SSH10N60B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology SSH10N60B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. SSH10N60B is well suited for high efficiency switch mode power supplies.