MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:06+07+pb-free
STB80PF55T4, STB85NF3LL, STB85NF3LL-1 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: .
D/C: 06+07+pb-free
Description: MOSFET P-CH 55V 80A D2PAK
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PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB85NF3LL
File Size: 439115 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB85NF3LL-1
File Size: 270749 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STB80PF55T4 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 25V |
| Power - Max | 300W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 258nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STB80PF55T4 STB80PF55T4 497 6559 6 ND 49765596ND 497-6559-6 |
This application specific Power MOSFET is the third genaration of STMicroelectronics unique " Single Feature Size" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 30 | V |
| VDGR | Drain-gate Voltage (RGS = 20 kW) | 30 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| VGSM | Gate-source Voltage Pulsed (tp£50ms; duty cycle 25%; Tj £ 150°C) |
± 20 | V |
| ID | Drain Current (continuos) at TC = 25°C | 85 | A |
| ID | Drain Current (continuos) at TC = 100°C | 60 | A |
| IDM (l) | Drain Current (pulsed) | 340 | A |
| PTOT | Total Dissipation at TC = 25°C | 110 | W |
| Derating Factor | 0.73 | W/°C | |
| Tstg | Storage Temperature | 65 to 175 | °C |
| Tj | Max. Operating Junction Temperature | 175 | °C |
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