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The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STF25NM50N Maximum Ratings
Symbol
Parameter
Value
Unit
TO- 220/D²PAK/ I²PAK/TO-247
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 k)
500
V
VGS
Gate- source Voltage
± 25
V
ID
Drain Current (continuos) at TC = 25
22
22(*)
A
ID
Drain Current (continuos) at TC = 100
14
14(*)
A
IDM()
Drain Current (pulsed)
88
88(*)
A
PTOT
Total Dissipation at TC = 25
160
40
W
Derating Factor
1.28
0.32
W/
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
Tstg
Storage Temperature
55 to 150
Tj
Max. Operating Junction Temperature
150
() Pulse width limited by safe operating area (1) ISD 22A, di/dt 400A/s, VDD 80% V(BR)DSS. (*) Limited only by maximum temperature allowed
STF25NM50N Features
· HIGH dv/dt AND AVALANCHE CAPABILITIES · 100% AVALANCHE TESTED · LOW INPUT CAPACITANCE AND GATE CHARGE · LOW GATE INPUT RESISTANCE
STF25NM50N Typical Application
The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system iniaturization and higher efficiencies.