STP100N03L-03, STP100NF03L-03, STP100NF04 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:04+
STP100N03L-03, STP100NF03L-03, STP100NF04 Datasheet download
Part Number: STP100N03L-03
MFG: ST
Package Cooled: TO-220
D/C: 04+
MFG:ST Package Cooled:TO-220 D/C:04+
STP100N03L-03, STP100NF03L-03, STP100NF04 Datasheet download
MFG: ST
Package Cooled: TO-220
D/C: 04+
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP100NF03L-03
File Size: 402723 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP100NF04
File Size: 598905 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate-Source Voltage |
± 16 |
V |
ID(1) |
Drain Current (continuous) at Tc = 25 |
100 |
A |
ID(1) |
Drain Current (continuous) at Tc = 100 |
100 |
A |
IDM(`) |
Drain Current (pulsed) |
400 |
A |
PTOT |
Total Dissipation at Tc = 25 |
300 |
W |
Derating Factor |
2 |
W/
| |
EAS (2) | Single Pulse Avalanche Energy |
1.9 |
J |
Tstg |
Storage Temperature |
-55 to 150 |
|
Tj |
Operating Junction Temperature |
-55 to 175 |
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol | Parameter |
Value |
Unit | |
VDS | Drain-source Voltage (VGS = 0) |
40 |
V | |
VDGR | Drain-gate Voltage (RGS = 20 k) |
40 |
V | |
VGS | Gate- source Voltage |
± 20 |
V | |
ID | Drain Current (continuos) at TC = 25 |
120 |
A | |
ID(#) | Drain Current (continuos) at TC = 100 |
120 |
A | |
IDM(`) | Drain Current (pulsed) |
480 |
A | |
PTOT | Total Dissipation at TC = 25 |
300 |
W | |
Derating Factor |
2 |
W/ | ||
dv/dt (1) | Peak Diode Recovery voltage slope |
6 |
V/ns | |
EAS(2) | Single Pulse Avalanche Energy |
1.2 |
J | |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 |
|