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STP100NF04L, STP1031LGA, STP1031LGA-250

STP100NF04L, STP1031LGA, STP1031LGA-250 Selling Leads, Datasheet

MFG:ST  Package Cooled:09+  D/C:05+

STP100NF04L, STP1031LGA, STP1031LGA-250 Picture

STP100NF04L, STP1031LGA, STP1031LGA-250 Datasheet download

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Part Number: STP100NF04L

 

MFG: ST

Package Cooled: 09+

D/C: 05+

 

 

 
 
 
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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2024-04-30
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP100NF04L

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Datasheet: STP100NF04L

File Size: 274465 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STP1031LGA Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2024-04-30
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP1031LGA

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Datasheet: STP1031LGA

File Size: 1489174 KB

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STP1031LGA-250 Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2024-04-30
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP04CM596B1R

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Datasheet: STP04CM596B1R

File Size: 412025 KB

Manufacturer: STMicroelectronics

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STP100NF04L General Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP100NF04L Maximum Ratings

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
40
V
VDGR
Drain- gate Voltage (RGS = 20 k)
40
V
VGS
Gate-Source Voltage
± 16
V
ID
Drain Current (continuous) at Tc = 25
100
A
ID

Drain Current (continuous) at Tc = 100
70
A
IDM(`)
Drain Current (pulsed)
400
A
PTOT
Total Dissipation at Tc = 25
300
W
Derating Factor
2
W/
dv/dt (1)
Peak Diode Recovery voltage slope
3.6
V/ns
EAS (2) Single Pulse Avalanche Energy 1.4 mJ
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
175
(•)Pulse width limited by safe operating area (1)ISD100A, di/dt 240A/µs, VDD32V(, Tj TJMAX
(2) Starting Tj = 25 , ID = 50A, VDD = 30V     (*) Current Limited by package

STP100NF04L Typical Application

 HIGH CURRENT, HIGH SWITCHING SPEED
  MOTOR CONTROL, AUDIO AMPLIFIERS
  DC-DC & DC-AC CONVERTERS
 SOLENOID AND RELAY DRIVERS

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