STP10NB20, STP10NB20FP, STP10NB30 Selling Leads, Datasheet
MFG:ST Package Cooled:sgs D/C:dc02
STP10NB20, STP10NB20FP, STP10NB30 Datasheet download
Part Number: STP10NB20
MFG: ST
Package Cooled: sgs
D/C: dc02
MFG:ST Package Cooled:sgs D/C:dc02
STP10NB20, STP10NB20FP, STP10NB30 Datasheet download
MFG: ST
Package Cooled: sgs
D/C: dc02
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: STP10NB20
File Size: 125107 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP10NB20FP
File Size: 125107 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit | |
STP10NK80Z |
STP10NK80ZFP |
|||
VDS |
Drain-source Voltage (VGS = 0) |
200 |
V | |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 |
V | |
VGS |
Gate-Source Voltage |
± 30 |
V | |
ID |
Drain Current (continuous) at Tc = 25 |
10 |
6 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
6 |
4 |
A |
IDM(`) |
Drain Current (pulsed) |
40 |
40 |
A |
PTOT |
Total Dissipation at Tc = 25 |
60 |
30 |
W |
Derating Factor |
85 |
30 |
W/ | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
0.68 |
0.24 |
V/ns |
VISO |
Insulation Withstand Voltage (DC) |
2000 |
2000 |
V |
Tstg |
Storage Temperature |
-65 to 175 |
| |
Tj | Max. Operating Junction Temperature | 150 |
Using the latest high voltage MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit | |
STP10NK80Z |
STP10NK80ZFP |
|||
VDS |
Drain-source Voltage (VGS = 0) |
200 |
V | |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 |
V | |
VGS |
Gate-Source Voltage |
± 30 |
V | |
ID |
Drain Current (continuous) at Tc = 25 |
10 |
6 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
6 |
4 |
A |
IDM(`) |
Drain Current (pulsed) |
40 |
40 |
A |
PTOT |
Total Dissipation at Tc = 25 |
60 |
30 |
W |
Derating Factor |
85 |
30 |
W/ | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
0.68 |
0.24 |
V/ns |
VISO |
Insulation Withstand Voltage (DC) |
2000 |
2000 |
V |
Tstg |
Storage Temperature |
-65 to 175 |
| |
Tj | Max. Operating Junction Temperature | 150 |