STP10NB50, STP10NB50FP, STP10NB60 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:06+
STP10NB50, STP10NB50FP, STP10NB60 Datasheet download
Part Number: STP10NB50
MFG: ST
Package Cooled: TO-220
D/C: 06+
MFG:ST Package Cooled:TO-220 D/C:06+
STP10NB50, STP10NB50FP, STP10NB60 Datasheet download
MFG: ST
Package Cooled: TO-220
D/C: 06+
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PDF/DataSheet Download
Datasheet: STP10NB50
File Size: 108148 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP10NB50FP
File Size: 108148 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP10NB60SFP
File Size: 323763 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol | Parameter | Value | Unit | |
STP16NB25 | STP16NB25FP | |||
VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 500 | V | |
VGS | Gate- source Voltage | ±30 | V | |
ID | Drain Current (continuos) at TC = 25 |
10.6 |
10.6(*) | A |
ID | Drain Current (continuos) at TC = 100 | 6.4 | 6.4(*) | A |
IDM() | Drain Current (pulsed) | 42.4 | 42.4 | A |
PTOT | Total Dissipation at TC = 25 | 135 | 40 | W |
Derating Factor | 1.08 | 0.32 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
Tstg | Storage Temperature | 65 to 150 | ||
Tj | Max. Operating Junction Temperature | 150 |
(•) Pulse width limited by safe operating area ( 1) ISD 10.6 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX (*) Limited only by maximum temperature allowed
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol | Parameter | Value | Unit | |
STP16NB25 | STP16NB25FP | |||
VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 500 | V | |
VGS | Gate- source Voltage | ±30 | V | |
ID | Drain Current (continuos) at TC = 25 |
10.6 |
10.6(*) | A |
ID | Drain Current (continuos) at TC = 100 | 6.4 | 6.4(*) | A |
IDM() | Drain Current (pulsed) | 42.4 | 42.4 | A |
PTOT | Total Dissipation at TC = 25 | 135 | 40 | W |
Derating Factor | 1.08 | 0.32 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
Tstg | Storage Temperature | 65 to 150 | ||
Tj | Max. Operating Junction Temperature | 150 |
(•) Pulse width limited by safe operating area ( 1) ISD 10.6 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX (*) Limited only by maximum temperature allowed
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE