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STP11N06, STP11NB40, STP11NB40FP

STP11N06, STP11NB40, STP11NB40FP Selling Leads, Datasheet

MFG:ST  Package Cooled:09+  D/C:08.09+

STP11N06, STP11NB40, STP11NB40FP Picture

STP11N06, STP11NB40, STP11NB40FP Datasheet download

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Part Number: STP11N06

 

MFG: ST

Package Cooled: 09+

D/C: 08.09+

 

 

 
 
 
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STP11N06 Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-07-12
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP04CM596B1R

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Datasheet: STP04CM596B1R

File Size: 412025 KB

Manufacturer: STMicroelectronics

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STP11NB40 Suppliers

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  • STP11NB40FP

  • Vendor: ST Pack: TO Qty: 1000 Note: stock on hand  Adddate: 2026-07-12
  • Inquire Now
  • TCW(HK) electronic limited   China
    Contact: Mr.David   MSN:hongjijia@hotmail.com
    Tel: 86-0755-82817106
    Fax: 86-0755-83012739
    (3)
  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-07-12
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP11NB40

PDF/DataSheet Download

Datasheet: STP11NB40

File Size: 118556 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STP11NB40FP Suppliers

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  • STP11NB40FP

  • Vendor: ST Pack: TO Qty: 1000 Note: stock on hand  Adddate: 2026-07-12
  • Inquire Now
  • TCW(HK) electronic limited   China
    Contact: Mr.David   MSN:hongjijia@hotmail.com
    Tel: 86-0755-82817106
    Fax: 86-0755-83012739
    (3)
  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-07-12
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP11NB40FP

PDF/DataSheet Download

Datasheet: STP11NB40FP

File Size: 118556 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Download : Click here to Download

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STP11NB40 General Description

Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STP11NB40 Maximum Ratings

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 k ) 400 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25
10.7
6.0 A
ID Drain Current (continuos) at TC = 100 6.7 3.8 A
IDM() Drain Current (pulsed) 42.8 42.8 A
PTOT Total Dissipation at TC = 25 125 40 W
  Derating Factor 1.0 0.32 W/
dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC)

-----

2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175

(•) Pulse width limited by safe operating area ( 1) ISD  10.7A, di/dt  200 A/ms, VDD  V(BR)DSS, Tj  TJMAX

STP11NB40 Features

 TYPICAL RDS(on) = 0.48
EXTREMELY HIGH dV/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

STP11NB40 Typical Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

STP11NB40FP General Description

Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STP11NB40FP Maximum Ratings

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 k ) 400 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25
10.7
6.0 A
ID Drain Current (continuos) at TC = 100 6.7 3.8 A
IDM() Drain Current (pulsed) 42.8 42.8 A
PTOT Total Dissipation at TC = 25 125 40 W
  Derating Factor 1.0 0.32 W/
dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC)

-----

2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175

(•) Pulse width limited by safe operating area ( 1) ISD  10.7A, di/dt  200 A/ms, VDD  V(BR)DSS, Tj  TJMAX

STP11NB40FP Features

 TYPICAL RDS(on) = 0.48
EXTREMELY HIGH dV/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

STP11NB40FP Typical Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

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