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STP11NM60FD-PB FREE, STP11NM60FP, STP120E

Table of contents:
Info of STP11NM60FD-PB FREE
Info of STP11NM60FP
Info of STP120E

STP11NM60FD-PB FREE, STP11NM60FP, STP120E Selling Leads, Datasheet

MFG:ST Package Cooled:TO 220 ISO FULL PACK IN LINE D/C:08+

STP11NM60FD-PB FREE, STP11NM60FP, STP120E Picture

STP11NM60FD-PB FREE, STP11NM60FP, STP120E Datasheet download

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Part Number: STP11NM60FD-PB FREE

MFG: ST

Package Cooled: TO 220 ISO FULL PACK IN LINE

D/C: 08+

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STP11NM60FP General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products

STP11NM60FP Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP(B)11NM60(-1)	STP11NM60FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuos) at T_C = 25	11	11(*)	A
I_D	Drain Current (continuos) at T_C = 100	7	7(*)	A
I_DM(`)	Drain Current (pulsed)	44	44(*)	A
P_TOT	Total Dissipation at T_C = 25	160	35	W
	Derating Factor	1.28	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20		V/ns
V_ISO	Insulation Winthstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	65 to 150
T_j	Max. Operating Junction Temperature	150

(`)Pulse width limited by safe operating area
(1) I_SD 11 A, di/dt 400 A/s, V_DD V_(BR)DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed

STP11NM60FP Features

` TYPICAL R_DS(on) = 0.4
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE

STP11NM60FP Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

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