STP12NB30, STP12NB30FP, STP12NK30Z Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:1
STP12NB30, STP12NB30FP, STP12NK30Z Datasheet download

Part Number: STP12NB30
MFG: ST
Package Cooled: TO-220
D/C: 1
MFG:ST Package Cooled:TO-220 D/C:1
STP12NB30, STP12NB30FP, STP12NK30Z Datasheet download

MFG: ST
Package Cooled: TO-220
D/C: 1
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PDF/DataSheet Download
Datasheet: STP12NB30
File Size: 57874 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP12NB30FP
File Size: 57874 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP12NK30Z
File Size: 290198 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
300 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
300 |
V |
|
VGS |
Gate-Source Voltage |
± 30 |
V |
|
ID
|
Drain Current (continuous) at Tc = 25 Drain Current (continuous) at Tc = 100 |
9 5.6 |
A A |
|
IDM(`) |
Drain Current (pulsed) |
36 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
90 |
W |
|
Derating Factor |
0.72 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
3000 |
V/ns |
| dv/dt (2) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
|
Tstg |
Storage Temperature |
-55 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
